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dc.contributor.authorCrespo Yepes, Albert
dc.contributor.authorBarajas Ojeda, Enrique
dc.contributor.authorMartin Martínez, Javier
dc.contributor.authorMateo Peña, Diego
dc.contributor.authorAragonès Cervera, Xavier
dc.contributor.authorRodríguez Martínez, Rosana
dc.contributor.authorNafría Maqueda, Montserrat
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2017-07-04T11:56:52Z
dc.date.available2017-07-04T11:56:52Z
dc.date.issued2017-06-25
dc.identifier.citationCrespo, A., Barajas, E., Martin, J., Mateo, D., Aragones, X., Rodríguez, R., Nafría, M. MOSFET degradation dependence on input signal power in a RF power amplifier. "Microelectronic engineering", 25 Juny 2017, vol. 178, p. 289-292.
dc.identifier.issn0167-9317
dc.identifier.urihttp://hdl.handle.net/2117/106157
dc.description.abstractAging produced by RF stress is experimentally analyzed on a RF CMOS power amplifier (PA), as a function of the stress power level. The selected circuit topology allows observing individual NMOS and PMOS transistors degradations, as well as the aging effect on the circuit functionality. A direct relation between DC MOSFETs and RF PA (gain) parameters has been observed. NMOS degradation (both in mobility and Vth) is stronger than that of the PMOS. Results suggest that transistors mobility reduction is the main cause of the RF degradation in this circuit.
dc.format.extent4 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors
dc.subject.lcshMetal oxide semiconductor field-effect transistors
dc.subject.lcshMetal oxide semiconductors
dc.subject.otherCMOS
dc.subject.otherMOSFET degradation
dc.subject.otherRF power amplifier
dc.subject.otherRF stress
dc.subject.otherAging
dc.titleMOSFET degradation dependence on input signal power in a RF power amplifier
dc.typeArticle
dc.subject.lemacTransistors MOSFET
dc.subject.lemacSemiconductors
dc.subject.lemacMetall-òxid-semiconductors complementaris
dc.subject.lemacMetall-òxid-semiconductors
dc.contributor.groupUniversitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.identifier.doi10.1016/j.mee.2017.05.021
dc.relation.publisherversionhttp://www.sciencedirect.com/science/article/pii/S0167931717302186
dc.rights.accessOpen Access
drac.iddocument21094975
dc.description.versionPostprint (published version)
upcommons.citation.authorCrespo, A.; Barajas, E.; Martin, J.; Mateo, D.; Aragones, X.; Rodríguez, R.; Nafría, M.
upcommons.citation.publishedtrue
upcommons.citation.publicationNameMicroelectronic engineering
upcommons.citation.volume178
upcommons.citation.startingPage289
upcommons.citation.endingPage292


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