Recent Submissions

  • Influence of punch trough stop layer and well depths on the robustness of bulk FinFETs to heavy ions impact 

    Calomarde Palomino, Antonio; Manich Bou, Salvador; Rubio Sola, Jose Antonio; Gamiz, Francisco (Institute of Electrical and Electronics Engineers (IEEE), 2022-05-02)
    Article
    Open Access
    This study analyzes the effects of the punch-through stop (PTS) layer and well depth in a bulk FinFET SRAM cell on the fraction of charge generated by an ion impact that is collected by the FinFET channel. More than 1700 ...
  • CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging 

    Crespo Yepes, Albert; Nasarre Campo, Carles; Garsot Borras, Norbert; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Nafría Maqueda, Montserrat (2022-05-01)
    Article
    Restricted access - publisher's policy
    In this work, CMOS inverters are subjected to electrical stress emulating a complete operation cycle and the shifts in the performance parameters (i.e., peak current and inversion voltage) evaluated. Moreover, degradation ...
  • A 3–5-GHz, 385–540-ps CMOS true time delay element for ultra-wideband antenna arrays 

    Aghazadeh Dafsari, Seyed Rasoul; Martínez García, Herminio; Barajas Ojeda, Enrique; Saberkari, Alireza (Elsevier, 2022-05-01)
    Article
    Restricted access - publisher's policy
    This paper proposes an all-pass filter-based true time delay (TTD) element covering a 3–5-GHz ultra-wideband (UWB) frequency. The proposed TTD element designed in a standard 0.18-µm CMOS technology achieves a tunable delay ...
  • Modeling of the degradation of CMOS inverters under pulsed stress conditions from ‘on-the-fly’ measurements 

    Crespo Yepes, Albert; Ramos Hortal, Regina; Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2021-10-01)
    Article
    Restricted access - publisher's policy
    In this work, an ‘on-the-fly’ measurement technique for the monitoring of CMOS inverters performance degradation is presented. This technique allows the characterization of the circuit degradation simultaneously with the ...
  • Analysis of random body bias application in FDSOI cryptosystems as a countermeasure to leakage-based power analysis attacks 

    Palma Carmona, Kenneth; Moll Echeto, Francisco de Borja (Institute of Electrical and Electronics Engineers (IEEE), 2021)
    Article
    Open Access
    This paper analyses a novel countermeasure to Leakage Power Analysis Attacks based on the application of a random Body Bias voltage level at the beginning of the encryption process. The countermeasure effectiveness is ...
  • Current balancing random body bias in FDSOI cryptosystems as a countermeasure to leakage power analysis attacks 

    Palma Carmona, Kenneth; Moll Echeto, Francisco de Borja (Institute of Electrical and Electronics Engineers (IEEE), 2022)
    Article
    Open Access
    This paper identifies vulnerabilities to recently proposed countermeasures to leakage power analysis attacks in FDSOI systems based on the application of a random body bias. The vulnerabilities are analyzed and the relative ...
  • BPF-based thermal sensor circuit for on-chip testing of RF circuits 

    Altet Sanahujes, Josep; Barajas Ojeda, Enrique; Mateo Peña, Diego; Billong, Alexandre; Aragonès Cervera, Xavier; Perpiñà Gilabet, Xavier; Reverter Cubarsí, Ferran (Multidisciplinary Digital Publishing Institute (MDPI), 2021-01)
    Article
    Open Access
    A new sensor topology meant to extract figures of merit of radio-frequency analog integrated circuits (RF-ICs) was experimentally validated. Implemented in a standard 0.35 µm complementary metal-oxide-semiconductor (CMOS) ...
  • Electronic properties of graphene nanoribbons with defects 

    Rallis, Konstantinos; Dimitrakis, Panagiotis; Karafydillis, Ioannis; Rubio Sola, Jose Antonio; Sirakoulis, Georgios (2021-01-27)
    Article
    Open Access
    Graphene nanoribbons (GNRs) are the most important emerging Graphene structures for nanoelectronic and sensor applications. GNRs with perfect lattices have been extensively studied, but fabricated GNRs contain lattice ...
  • Alternative memristor-based interconnect topologies for fast adaptive synchronization of chaotic circuits 

    Escudero López, Manuel; Vourkas, Ioannis; Rubio Sola, Jose Antonio (2020-09)
    Article
    Restricted access - publisher's policy
    Resistive switching devices (memristors) constitute an emerging device technology promising for a vari- ety of applications that are currently being studied. In this context, the use of memristors as coupling el- ements ...
  • Aging in CMOS RF linear power amplifiers: an experimental study 

    Aragonès Cervera, Xavier; Barajas Ojeda, Enrique; Crespo Yepes, Albert; Mateo Peña, Diego; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (IEEE Microwave Theory and Techniques Society, 2021-02-01)
    Article
    Restricted access - publisher's policy
    An extensive experimental analysis of the hot carrier injection (HCI) and bias temperature instability (BTI) aging effects on RF linear power amplifiers (PAs) is presented in this article. Two different 2.45-GHz PA topologies ...
  • Probabilistic resistive switching device modeling based on Markov jump processes 

    Ntinas, Vasileios; Rubio Sola, Jose Antonio; Sirakoulis, Georgios (Institute of Electrical and Electronics Engineers (IEEE), 2020-12-02)
    Article
    Open Access
    In this work, a versatile mathematical framework for multi-state probabilistic modeling of Resistive Switching (RS) devices is proposed for the first time. The mathematical formulation of memristor and Markov jump processes ...
  • Power-efficient noise-Induced reduction of ReRAM cell’s temporal variability effects 

    Ntinas, Vasileios; Rubio Sola, Jose Antonio; Sirakoulis, Georgios; Salvador, Emili; Pedro, Marta; Crespo-Yepes, A.; Martin Martinez, Javier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2021-04)
    Article
    Open Access
    Resistive Random Access Memory (ReRAM) is apromising novel memory technology for non-volatile storing, with low-power operation and ultra-high area density. However, ReRAM memories still face issues through commerciali ...

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