Enviaments recents

  • Electro-thermal coupling analysis methodology for RF circuits 

    Gómez Salinas, Didac; Dufis, Cédric Yvan; Altet Sanahujes, Josep; Mateo Peña, Diego; González Jiménez, José Luis (2012-09)
    Article
    Accés restringit per política de l'editorial
    In this paper an electro-thermal co-simulation methodology suitable for RF circuits is presented. It circumvents traditional transient simulation drawbacks that arise when signals or magnitudes whose frequencies are separated ...
  • Experimental verification of memristor-based material implication NAND operation 

    Maestro Izquierdo, Marcos; Martin Martínez, Javier; Crespo Yepes, Albert; Escudero López, Manuel; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat; Aymerich Humet, Xavier; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017-10-11)
    Article
    Accés obert
    Memristors are being considered as promising devices for highly dense memory systems as well as the potential basis of new computational paradigms. In this scenario, and in relation with data processing, one of the more ...
  • Single-MOSFET DC thermal sensor for RF-amplifier central frequency extraction 

    Reverter Cubarsí, Ferran; Perpiñà Gilabet, Xavier; Barajas Ojeda, Enrique; León, Javier; Vellvehi, Miquel; Jordà, Xavier; Altet Sanahujes, Josep (2017-09-01)
    Article
    Accés obert
    © 2017 Elsevier B.V. A DC thermal sensor based on a single metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed to extract high-frequency electrical features of embedded circuits. The MOSFET sensor is ...
  • Strategies to enhance the 3T1D-DRAM cell variability robustness beyond 22 nm 

    Amat Bertran, Esteve; García Almudéver, Carmen; Aymerich, N.; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (2014-10-01)
    Article
    Accés obert
    3T1D cell has been stated as a valid alternative to be implemented on L1 memory cache to substitute 6T, highly affected by device variability as technology dimensions are reduced. In this work, we have shown that 22 nm ...
  • Prospects of Tunnel FETs in the design of power management circuits for weak energy harvesting dc sources 

    Nunes Cavalheiro, David; Moll Echeto, Francisco de Borja; Valtchev, Stanimir (Institute of Electrical and Electronics Engineers (IEEE), 2018-02-23)
    Article
    Accés obert
    In this paper, a new tunnel FET (TFET)-based power management circuit (PMC) is proposed for weak dc energy harvesting sources. Thanks to their particular carrier injection mechanisms, TFETs can be used to design efficient ...
  • Experimental study of artificial neural networks using a digital memristor simulator 

    Ntinas, Vasileios; Vourkas, Ioannis; Abusleme, Angel; Sirakoulis, Georgios; Rubio Sola, Jose Antonio (2018-02-01)
    Article
    Accés obert
    This paper presents a fully digital implementation of a memristor hardware simulator, as the core of an emulator, based on a behavioral model of voltage-controlled threshold-type bipolar memristors. Compared to other analog ...
  • Experimental time evolution study of the HFO-based IMPLY gate operation 

    Maestro, M; Marin-Martinez, J.; Crespo-Yepes, A.; Escudero, Manel; Rodriguez, R.; Nafria, M.; Aymerich, X.; Rubio Sola, Jose Antonio (2018-02-01)
    Article
    Accés obert
    In the last years, memristor devices have been proposed as key elements to develop a new paradigm to implement logic gates. In particular, the memristor-based material implication (IMPLY) gate has been presented as a ...
  • Differential temperature sensor with high sensitivity, wide dynamic range and digital offset calibration 

    Vidal López, Eva María; Ruiz Cayuela, Sergio; Duquenoy, Jérémy; González, J. L.; Altet Sanahujes, Josep (2017-08-15)
    Article
    Accés restringit per política de l'editorial
    The goal of this paper is twofold: first to add together all different causes that can alter the offset of a differential temperature sensor and, second, to present a new differential temperature sensor architecture that ...
  • MOSFET degradation dependence on input signal power in a RF power amplifier 

    Crespo Yepes, Albert; Barajas Ojeda, Enrique; Martin Martínez, Javier; Mateo Peña, Diego; Aragonès Cervera, Xavier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2017-06-25)
    Article
    Accés obert
    Aging produced by RF stress is experimentally analyzed on a RF CMOS power amplifier (PA), as a function of the stress power level. The selected circuit topology allows observing individual NMOS and PMOS transistors ...
  • TFET-Based power management circuit for RF energy harvesting 

    Nunes Cavalheiro, David Manuel; Moll Echeto, Francisco de Borja; Valtchev, Stanimir (2016-11-14)
    Article
    Accés obert
    This paper proposes a Tunnel FET (TFET)-based power management circuit (PMC) for ultra-low power RF energy harvesting applications. In contrast with conventional thermionic devices, the band-to-band tunneling mechanism of ...
  • Crossbar-based memristive logic-in-memory architecture 

    Papandroulikadis, Georgios; Vourkas, Ioannis; Abustelema, Angel; Sirakoulis, Georgios; Rubio Sola, Jose Antonio (2017-04-01)
    Article
    Accés obert
    The use of memristors and resistive random access memory (ReRAM) technology to perform logic computations, has drawn considerable attention from researchers in recent years. However, the topological aspects of the ...
  • Statistical analysis and comparison of 2T and 3T1D e-DRAM minimum energy operation 

    Rana, Manish; Canal Corretger, Ramon; Amat Bertran, Esteve; Rubio Sola, Jose Antonio (2017-03-01)
    Article
    Accés obert
    Bio-medical wearable devices restricted to their small-capacity embedded-battery require energy-efficiency of the highest order. However, minimum-energy point (MEP) at sub-threshold voltages is unattainable with SRAM memory, ...

Mostra'n més