Recent Submissions

  • Active radiation-hardening strategy in bulk FinFETs 

    Calomarde Palomino, Antonio; Rubio Sola, Jose Antonio; Moll Echeto, Francisco de Borja; Gamiz, Francisco (Institute of Electrical and Electronics Engineers (IEEE), 2020)
    Article
    Open Access
    In this paper, we present a new method to mitigate the effect of the charge collected by trigate FinFET devices after an ionizing particle impact. The method is based on the creation of an internal structure that generates ...
  • Shortest path computing in directed graphs with weighted edges mapped on random networks of memristors 

    Fernández Moya, Carlos; Vourkas, Ioannis; Rubio Sola, Jose Antonio (2020-03-01)
    Article
    Restricted access - publisher's policy
    To accelerate the execution of advanced computing tasks, in-memory computing with resistive memory provides a promising solution. In this context, networks of memristors could be used as parallel computing medium for the ...
  • Mechanical energy harvesting taxonomy for industrial environments: application to the railway industry 

    López Díez, Pablo; Gabilondo, I.; Alarcón Cot, Eduardo José; Moll Echeto, Francisco de Borja (2020-07-01)
    Article
    Open Access
    Traditional industry is experiencing a worldwide evolution with Industry 4.0. Wireless sensor networks (WSNs) have a main role in this evolution as an essential part of data acquisition. The way in which WSNs are powered ...
  • A systematic method to design efficient ternary high performance CNTFET-based logic cells 

    Dabaghi Zarandi, Arezoo; Reza Reshadinezhad, Mohammad; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2020-01-01)
    Article
    Open Access
    The huge quantity of nodes and interconnections in modern binary circuits leads to extremely high levels of energy consumption. The interconnection complexity and other issues of binary circuits encourage researchers to ...
  • Exploring the “resistance change per energy unit” as universal performance parameter for resistive switching devices 

    Gómez Mir, Jorge Tomás; Vourkas, Ioannis; Abusleme, Angel; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat; Rubio Sola, Jose Antonio (2020-03-01)
    Article
    Open Access
    Resistive switching (RS) device (memristor) technology is continuously maturing towards industrial establishment. There are RS devices that demonstrate an “incremental” (analog) switching behavior, whereas others change ...
  • Differential temperature sensors: Review of applications in the test and characterization of circuits, usage and design methodology 

    Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Altet Sanahujes, Josep (Multidisciplinary Digital Publishing Institute (MDPI), 2019-11-05)
    Article
    Open Access
    Differential temperature sensors can be placed in integrated circuits to extract a signature ofthe power dissipated by the adjacent circuit blocks built in the same silicon die. This review paper firstdiscusses the singularity ...
  • Memristive logic in crossbar memory arrays: Variability-aware design for higher reliability 

    Escudero López, Manuel; Vourkas, Ioannis; Rubio Sola, Jose Antonio; Moll Echeto, Francisco de Borja (2019-01-01)
    Article
    Open Access
    The advent of the first TiO 2 -based memristor in 2008 revived the scientific interest both from academia and industry for this device technology and has so far led to several emerging applications including logic and ...
  • Voltage divider for self-limited analog state programing of memristors 

    Gomez, Jorge; Vourkas, Ioannis; Abusleme, Angel; Sirakoulis, Georgios; Rubio Sola, Jose Antonio (2019-06-19)
    Article
    Open Access
    Resistive switching devices - memristors - present a tunable, incremental switching behavior. Tuning their state accurately, repeatedly and in a wide range, makes memristors well-suited for multi-level (ML) resistive memory ...
  • Output Power and Gain Monitoring in RF CMOS Class A Power Amplifiers by Thermal Imaging 

    Perpinyà, Xavier; Reverter Cubarsí, Ferran; León, Javier; Barajas Ojeda, Enrique; Vellvehi, Miquel; Jordà, Xavier; Altet Sanahujes, Josep (2018-01-01)
    Article
    Open Access
    The viability of using off-chip single-shot imaging techniques for local thermal testing in integrated Radio Frequency (RF) power amplifiers (PA’s) is analyzed. With this approach, the frequency response of the output power ...
  • A versatile CMOS transistor array IC for the statistical characterization of time-zero variability, RTN, BTI, and HCI 

    Diaz Fortuny, Javier; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Castro López, Rafael; Roca Moreno, Elisenda; Aragonès Cervera, Xavier; Barajas Ojeda, Enrique; Mateo Peña, Diego; Fernández Fernández, Francisco V.; Nafría Maqueda, Montserrat (2018-01-01)
    Article
    Open Access
    Statistical characterization of CMOS transistor variability phenomena in modern nanometer technologies is key for accurate end-of-life prediction. This paper presents a novel CMOS transistor array chip to statistically ...
  • Optimization of FinFET-based gain cells for low power sub-vt embedded drams 

    Amat, Esteve; Calomarde Palomino, Antonio; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (2018-06-01)
    Article
    Open Access
    Sub-threshold circuits (sub-V T) are a promising alternative in the implementation of low power electronics. The implementation of gain-cell embedded DRAMs (eDRAMs) based on FinFET devices requires a careful design to ...
  • Review on suitable eDRAM configurations for next nano-metric electronics era 

    Amat, Esteve; Canal Corretger, Ramon; Calomarde Palomino, Antonio; Rubio Sola, Jose Antonio (2018-03)
    Article
    Open Access
    We summarize most of our studies focused on the main reliability issues that can threat the gain-cells eDRAM behavior when it is simulated at the nano-metric device range has been collected in this review. So, to outperform ...

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