Enviaments recents

  • Experimental verification of memristor-based material implication NAND operation 

    Maestro Izquierdo, Marcos; Martin Martínez, Javier; Crespo Yepes, Albert; Escudero López, Manuel; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat; Aymerich Humet, Xavier; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017-10-11)
    Article
    Accés obert
    Memristors are being considered as promising devices for highly dense memory systems as well as the potential basis of new computational paradigms. In this scenario, and in relation with data processing, one of the more ...
  • Single-MOSFET DC thermal sensor for RF-amplifier central frequency extraction 

    Reverter Cubarsí, Ferran; Perpiñà Gilabet, Xavier; Barajas Ojeda, Enrique; León, Javier; Vellvehi, Miquel; Jordà, Xavier; Altet Sanahujes, Josep (2017-09-01)
    Article
    Accés obert
    © 2017 Elsevier B.V. A DC thermal sensor based on a single metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed to extract high-frequency electrical features of embedded circuits. The MOSFET sensor is ...
  • Strategies to enhance the 3T1D-DRAM cell variability robustness beyond 22 nm 

    Amat Bertran, Esteve; García Almudéver, Carmen; Aymerich, N.; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (2014-10-01)
    Article
    Accés obert
    3T1D cell has been stated as a valid alternative to be implemented on L1 memory cache to substitute 6T, highly affected by device variability as technology dimensions are reduced. In this work, we have shown that 22 nm ...
  • Prospects of Tunnel FETs in the design of power management circuits for weak energy harvesting dc sources 

    Nunes Cavalheiro, David; Moll Echeto, Francisco de Borja; Valtchev, Stanimir (Institute of Electrical and Electronics Engineers (IEEE), 2018-02-23)
    Article
    Accés obert
    In this paper, a new tunnel FET (TFET)-based power management circuit (PMC) is proposed for weak dc energy harvesting sources. Thanks to their particular carrier injection mechanisms, TFETs can be used to design efficient ...
  • Experimental study of artificial neural networks using a digital memristor simulator 

    Ntinas, Vasileios; Vourkas, Ioannis; Abusleme, Angel; Sirakoulis, Georgios; Rubio Sola, Jose Antonio (2018-02-01)
    Article
    Accés obert
    This paper presents a fully digital implementation of a memristor hardware simulator, as the core of an emulator, based on a behavioral model of voltage-controlled threshold-type bipolar memristors. Compared to other analog ...
  • Suitability of FinFET introduction into eDRAM cells for operate at sub-threshold level 

    Amat, Esteve; Calomarde Palomino, Antonio; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017)
    Comunicació de congrés
    Accés restringit per política de l'editorial
    This paper explores the feasibility, in terms of performance and reliability, of gain-cell embedded DRAM (eDRAM) to be operative at sub-threshold range, when they are implemented with 10 nm FinFET devices. The use of ...
  • Experimental time evolution study of the HFO-based IMPLY gate operation 

    Maestro, M; Marin-Martinez, J.; Crespo-Yepes, A.; Escudero, Manel; Rodriguez, R.; Nafria, M.; Aymerich, X.; Rubio Sola, Jose Antonio (2018-02-01)
    Article
    Accés obert
    In the last years, memristor devices have been proposed as key elements to develop a new paradigm to implement logic gates. In particular, the memristor-based material implication (IMPLY) gate has been presented as a ...
  • Adaptive fault-tolerant architecture for unreliable device technologies 

    Aymerich, Nivard; Cotofana, Sorin; Rubio Sola, Jose Antonio (CRC Press, Taylor and Francis Group, 2013-06-03)
    Capítol de llibre
    Accés restringit per política de l'editorial
    Nanoelectronic Device Applications Handbook gives a comprehensive snapshot of the state of the art in nanodevices for nanoelectronics applications. Combining breadth and depth, the book includes 68 chapters on topics that ...
  • An on-line test strategy and analysis for a 1T1R crossbar memory 

    Escudero, Manel; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio; Vourkas, Ioannis (Institute of Electrical and Electronics Engineers (IEEE), 2017)
    Text en actes de congrés
    Accés obert
    Memristors are emerging devices known by their nonvolability, compatibility with CMOS processes and high density in circuits density in circuits mostly owing to the crossbar nanoarchitecture. One of their most notable ...
  • Reliability issues in RRAM ternary memories affected by variability and aging mechanisms 

    Rubio Sola, Jose Antonio; Escudero, Manuel; Pouyan, Peyman (Institute of Electrical and Electronics Engineers (IEEE), 2017)
    Text en actes de congrés
    Accés obert
    Resistive switching Random Access Memories (RRAM) are being considered as a promising alternative for conventional memories mainly due to their high speed, scalability, CMOS compatibility, Non-Volatile behavior (NVM), and ...
  • Análisis del retardo en enlaces con protocolos ARQ y control de flujo: aplicación a una red estrella 

    Rubio Sola, Jose Antonio; Figueras Pàmies, Joan (Marcombo, 1983)
    Text en actes de congrés
    Accés obert
    El objetivo de este trabajo se enmarca en el desarrollo de herramientas de cuantificación de los tiempos de retardo en redes de computadores. El análisis se ha centrado en la evaluación del tiempo medio de retardo en el ...
  • Differential temperature sensor with high sensitivity, wide dynamic range and digital offset calibration 

    Vidal López, Eva María; Ruiz Cayuela, Sergio; Duquenoy, Jérémy; González, J. L.; Altet Sanahujes, Josep (2017-08-15)
    Article
    Accés restringit per política de l'editorial
    The goal of this paper is twofold: first to add together all different causes that can alter the offset of a differential temperature sensor and, second, to present a new differential temperature sensor architecture that ...

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