Recent Submissions

  • Linear, time-invariant model of the dynamics of a CMOS CC-CP 

    Palma Carmona, Kenneth; Moll Echeto, Francisco de Borja (Institute of Electrical and Electronics Engineers (IEEE), 2019)
    Conference lecture
    Open Access
    This paper presents the development of a linear dynamic model of a MOS Cross Coupled Charge Pump (CC-CP) suitable for low voltage energy harvesting systems in the form of a Discrete-Time State-Space set of equations ...
  • Exploring the “resistance change per energy unit” as universal performance parameter for resistive switching devices 

    Gómez Mir, Jorge Tomás; Vourkas, Ioannis; Abusleme, Angel; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat; Rubio Sola, Jose Antonio (2020-03-01)
    Article
    Restricted access - publisher's policy
    Resistive switching (RS) device (memristor) technology is continuously maturing towards industrial establishment. There are RS devices that demonstrate an “incremental” (analog) switching behavior, whereas others change ...
  • Differential temperature sensors: Review of applications in the test and characterization of circuits, usage and design methodology 

    Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Altet Sanahujes, Josep (Multidisciplinary Digital Publishing Institute (MDPI), 2019-11-05)
    Article
    Open Access
    Differential temperature sensors can be placed in integrated circuits to extract a signature ofthe power dissipated by the adjacent circuit blocks built in the same silicon die. This review paper firstdiscusses the singularity ...
  • Memristive logic in crossbar memory arrays: Variability-aware design for higher reliability 

    Escudero López, Manuel; Vourkas, Ioannis; Rubio Sola, Jose Antonio; Moll Echeto, Francisco de Borja (2019-01-01)
    Article
    Open Access
    The advent of the first TiO 2 -based memristor in 2008 revived the scientific interest both from academia and industry for this device technology and has so far led to several emerging applications including logic and ...
  • A pragmatic gaze on stochastic resonance based variability tolerant memristance 

    Ntinas, Vasileios; Rubio Sola, Jose Antonio; Sirakoulis, Georgios Ch.; Cotofana, Sorin (Institute of Electrical and Electronics Engineers (IEEE), 2019)
    Conference report
    Open Access
    Stochastic Resonance (SR) is a nonlinear system specific phenomenon, which was demonstrated to lead to system unexpected (counter-intuitive) performance improvements under certain noise conditions. Memristor, on the other ...
  • Wave computing with passive memristive networks 

    Fyrigos, Iosif; Ntinas, Vasileios; Sirakoulis, Georgios; Adamatzky, Andrew; Erokhin, Victor; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2019)
    Conference report
    Open Access
    Since CMOS technology approaches its physical limits, the spotlight of computing technologies and architectures shifts to unconventional computing approaches. In this area, novel computing systems, inspired by natural and ...
  • Voltage divider for self-limited analog state programing of memristors 

    Gomez, Jorge; Vourkas, Ioannis; Abusleme, Angel; Sirakoulis, Georgios; Rubio Sola, Jose Antonio (2019-06-19)
    Article
    Open Access
    Resistive switching devices - memristors - present a tunable, incremental switching behavior. Tuning their state accurately, repeatedly and in a wide range, makes memristors well-suited for multi-level (ML) resistive memory ...
  • Aging in CMOS RF linear power amplifiers: experimental comparison and modeling 

    Aragonès Cervera, Xavier; Mateo Peña, Diego; Barajas Ojeda, Enrique; Crespo-Yepes, A.; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat (Institute of Electrical and Electronics Engineers (IEEE), 2019)
    Conference report
    Restricted access - publisher's policy
    This paper characterizes experimentally the aging degradation experienced by two different 2.45 GHz power amplifier circuits of similar performance, implemented in a 65 nm CMOS technology. Results demonstrate the importance ...
  • On the variability-aware design of memristor-based logic circuits 

    Escudero López, Manuel; Vourkas, Ioannis; Rubio Sola, Jose Antonio; Moll Echeto, Francisco de Borja (Institute of Electrical and Electronics Engineers (IEEE), 2018)
    Conference report
    Open Access
    Ever since the advent of the first TiO 2 -based memristor and the respective linear model published by Hewlett-Packard Labs, several behavioral models of memristors have been published. Such models capture the fundamental ...
  • Variability-tolerant memristor-based ratioed logic in crossbar array 

    Escudero López, Manuel; Rubio Sola, Jose Antonio; Moll Echeto, Francisco de Borja; Vourkas, Ioannis (Institute of Electrical and Electronics Engineers (IEEE), 2018)
    Conference report
    Open Access
    The advent of the first TiO2-based memristor in 2008 revived the scientific interest both from academia and industry for this de- vice technology, with several emerging applications including that of logic circuits. Several ...
  • Multi-valued logic circuits on graphene quantum point contact devices 

    Rallis, Konstantinos; Sirakoulis, Georgios; Karafyllidis, Ioannis; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2018)
    Conference report
    Open Access
    Graphene quantum point contacts (G-QPC) combine switching operations with quantized conductance, which can be modulated by top and back gates. Here we use the conductance quantization to design and simulate multi-valued ...
  • Analysis of body bias and RTN-induced frequency shift of low voltage ring oscillators in FDSOI technology 

    Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Porti Pujal, Marc; Nafria, M.; Castro López, Rafael; Roca Moreno, Elisenda; Fernandez, Francisco V. (Institute of Electrical and Electronics Engineers (IEEE), 2018)
    Conference report
    Restricted access - publisher's policy
    Electronic circuits powered at ultra low voltages (500 mV and below) are desirable for their low energy and power consumption. However, RTN (Random Telegraph Noise)-induced threshold voltage variations become very significant ...

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