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  Output Power and Gain Monitoring in RF CMOS Class A Power Amplifiers by Thermal Imaging 

  Perpinyà, Xavier; Reverter Cubarsí, Ferran; León, Javier; Barajas Ojeda, Enrique; Vellvehi, Miquel; Jordà, Xavier; Altet Sanahujes, Josep (2018-01-01)
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  The viability of using off-chip single-shot imaging techniques for local thermal testing in integrated Radio Frequency (RF) power amplifiers (PA’s) is analyzed. With this approach, the frequency response of the output power ...
• A comprehensive method to taxonomize mechanical energy harvesting technologies 

  Diez, P.L.; Gabilondo, I.; Alarcón Cot, Eduardo José; Moll Echeto, Francisco de Borja (Institute of Electrical and Electronics Engineers (IEEE), 2018)
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  Traditional industry is experiencing a worldwide development with Industry 4.0. Wireless sensor networks (WSNs) have a main role in this revolution as an essential part of data acquisition. The way in which WSNs are powered ...
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  A versatile CMOS transistor array IC for the statistical characterization of time-zero variability, RTN, BTI, and HCI 

  Diaz Fortuny, Javier; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Castro López, Rafael; Roca Moreno, Elisenda; Aragonès Cervera, Xavier; Barajas Ojeda, Enrique; Mateo Peña, Diego; Fernández Fernández, Francisco V.; Nafría Maqueda, Montserrat (2018-01-01)
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  Statistical characterization of CMOS transistor variability phenomena in modern nanometer technologies is key for accurate end-of-life prediction. This paper presents a novel CMOS transistor array chip to statistically ...
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  Modem gain-cell memories in advanced technologies 

  Amat Bertran, Esteve; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2018)
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  With the advent of the slowdown in DRAM capacitor scaling [1] and the increased reliability problems of traditional 6T SRAM memories [2], industry and academia have looked for alternative memory cells. Among those, gain- ...
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  Optimization of FinFET-based gain cells for low power sub-vt embedded drams 

  Amat, Esteve; Calomarde Palomino, Antonio; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (2018-06-01)
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  Sub-threshold circuits (sub-V T) are a promising alternative in the implementation of low power electronics. The implementation of gain-cell embedded DRAMs (eDRAMs) based on FinFET devices requires a careful design to ...
• Body bias generators for ultra low voltage circuits in FDSOI technology 

  Justo, Diego; Nunes Cavalheiro, David; Moll Echeto, Francisco de Borja (Institute of Electrical and Electronics Engineers (IEEE), 2018)
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  Electronic circuits powered at ultra low voltages (300 mV and below) are desirable for their low energy and power consumption. However, the performance at such low power voltage is severely degraded. FDSOI technology, with ...
• Review on suitable eDRAM configurations for next nano-metric electronics era 

  Amat, Esteve; Canal Corretger, Ramon; Calomarde Palomino, Antonio; Rubio Sola, Jose Antonio (2018-03)
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  We summarize most of our studies focused on the main reliability issues that can threat the gain-cells eDRAM behavior when it is simulated at the nano-metric device range has been collected in this review. So, to outperform ...
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  Memristive cellular automata for modeling of epileptic brain activity 

  Karamani, Rafallia; Fyrigos, Iosif; Ntinas, Vasileios; Vourkas, Ioannis; Sirakoulis, Georgios Ch.; Rubio Sola, Jose Antonio (2018)
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  Cellular Automata (CA) is a nature-inspired and widespread computational model which is based on the collective and emergent parallel computing capability of units (cells) locally interconnected in an abstract brain-like ...
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  Coupled physarum-inspired memristor oscillators for neuron-like operations 

  Ntinas, Vasileios; Vourkas, Ioannis; Sirakoulis, Georgios Ch.; Adamatzky, Andrew; Rubio Sola, Jose Antonio (2018)
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  Unconventional computing has been studied intensively, even after the appearance of CMOS technology. Currently, it has returned to the spotlight because CMOS is about to reach its physical limits, given that the constant ...
• Electro-thermal coupling analysis methodology for RF circuits 

  Gómez Salinas, Didac; Dufis, Cédric Yvan; Altet Sanahujes, Josep; Mateo Peña, Diego; González Jiménez, José Luis (2012-09)
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  In this paper an electro-thermal co-simulation methodology suitable for RF circuits is presented. It circumvents traditional transient simulation drawbacks that arise when signals or magnitudes whose frequencies are separated ...
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  Experimental verification of memristor-based material implication NAND operation 

  Maestro Izquierdo, Marcos; Martin Martínez, Javier; Crespo Yepes, Albert; Escudero López, Manuel; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat; Aymerich Humet, Xavier; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017-10-11)
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  Memristors are being considered as promising devices for highly dense memory systems as well as the potential basis of new computational paradigms. In this scenario, and in relation with data processing, one of the more ...
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  Single-MOSFET DC thermal sensor for RF-amplifier central frequency extraction 

  Reverter Cubarsí, Ferran; Perpiñà Gilabet, Xavier; Barajas Ojeda, Enrique; León, Javier; Vellvehi, Miquel; Jordà, Xavier; Altet Sanahujes, Josep (2017-09-01)
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  Accés obert

  © 2017 Elsevier B.V. A DC thermal sensor based on a single metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed to extract high-frequency electrical features of embedded circuits. The MOSFET sensor is ...

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