HIPICS - High Performance Integrated Circuits and Systems

 

Enviaments recents

  • Optimization of FinFET-based gain cells for low power sub-vt embedded drams 

    Amat, Esteve; Calomarde Palomino, Antonio; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (2018-06-01)
    Article
    Accés obert
    Sub-threshold circuits (sub-V T) are a promising alternative in the implementation of low power electronics. The implementation of gain-cell embedded DRAMs (eDRAMs) based on FinFET devices requires a careful design to ...

  • Body bias generators for ultra low voltage circuits in FDSOI technology 

    Justo, Diego; Nunes Cavalheiro, David; Moll Echeto, Francisco de Borja (Institute of Electrical and Electronics Engineers (IEEE), 2018)
    Text en actes de congrés
    Accés restringit per política de l'editorial
    Electronic circuits powered at ultra low voltages (300 mV and below) are desirable for their low energy and power consumption. However, the performance at such low power voltage is severely degraded. FDSOI technology, with ...

  • Review on suitable eDRAM configurations for next nano-metric electronics era 

    Amat, Esteve; Canal Corretger, Ramon; Calomarde Palomino, Antonio; Rubio Sola, Jose Antonio (2018-03)
    Article
    Accés restringit per política de l'editorial
    We summarize most of our studies focused on the main reliability issues that can threat the gain-cells eDRAM behavior when it is simulated at the nano-metric device range has been collected in this review. So, to outperform ...

  • Memristive cellular automata for modeling of epileptic brain activity 

    Karamani, Rafallia; Fyrigos, Iosif; Ntinas, Vasileios; Vourkas, Ioannis; Sirakoulis, Georgios Ch.; Rubio Sola, Jose Antonio (2018)
    Text en actes de congrés
    Accés obert
    Cellular Automata (CA) is a nature-inspired and widespread computational model which is based on the collective and emergent parallel computing capability of units (cells) locally interconnected in an abstract brain-like ...

  • Coupled physarum-inspired memristor oscillators for neuron-like operations 

    Ntinas, Vasileios; Vourkas, Ioannis; Sirakoulis, Georgios Ch.; Adamatzky, Andrew; Rubio Sola, Jose Antonio (2018)
    Text en actes de congrés
    Accés obert
    Unconventional computing has been studied intensively, even after the appearance of CMOS technology. Currently, it has returned to the spotlight because CMOS is about to reach its physical limits, given that the constant ...

  • Electro-thermal coupling analysis methodology for RF circuits 

    Gómez Salinas, Didac; Dufis, Cédric Yvan; Altet Sanahujes, Josep; Mateo Peña, Diego; González Jiménez, José Luis (2012-09)
    Article
    Accés restringit per política de l'editorial
    In this paper an electro-thermal co-simulation methodology suitable for RF circuits is presented. It circumvents traditional transient simulation drawbacks that arise when signals or magnitudes whose frequencies are separated ...

  • Experimental verification of memristor-based material implication NAND operation 

    Maestro Izquierdo, Marcos; Martin Martínez, Javier; Crespo Yepes, Albert; Escudero López, Manuel; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat; Aymerich Humet, Xavier; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017-10-11)
    Article
    Accés obert
    Memristors are being considered as promising devices for highly dense memory systems as well as the potential basis of new computational paradigms. In this scenario, and in relation with data processing, one of the more ...

  • Single-MOSFET DC thermal sensor for RF-amplifier central frequency extraction 

    Reverter Cubarsí, Ferran; Perpiñà Gilabet, Xavier; Barajas Ojeda, Enrique; León, Javier; Vellvehi, Miquel; Jordà, Xavier; Altet Sanahujes, Josep (2017-09-01)
    Article
    Accés obert
    © 2017 Elsevier B.V. A DC thermal sensor based on a single metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed to extract high-frequency electrical features of embedded circuits. The MOSFET sensor is ...

  • Strategies to enhance the 3T1D-DRAM cell variability robustness beyond 22 nm 

    Amat Bertran, Esteve; García Almudéver, Carmen; Aymerich, N.; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (2014-10-01)
    Article
    Accés obert
    3T1D cell has been stated as a valid alternative to be implemented on L1 memory cache to substitute 6T, highly affected by device variability as technology dimensions are reduced. In this work, we have shown that 22 nm ...

  • Prospects of Tunnel FETs in the design of power management circuits for weak energy harvesting dc sources 

    Nunes Cavalheiro, David; Moll Echeto, Francisco de Borja; Valtchev, Stanimir (Institute of Electrical and Electronics Engineers (IEEE), 2018-02-23)
    Article
    Accés obert
    In this paper, a new tunnel FET (TFET)-based power management circuit (PMC) is proposed for weak dc energy harvesting sources. Thanks to their particular carrier injection mechanisms, TFETs can be used to design efficient ...

  • Experimental study of artificial neural networks using a digital memristor simulator 

    Ntinas, Vasileios; Vourkas, Ioannis; Abusleme, Angel; Sirakoulis, Georgios; Rubio Sola, Jose Antonio (2018-02-01)
    Article
    Accés obert
    This paper presents a fully digital implementation of a memristor hardware simulator, as the core of an emulator, based on a behavioral model of voltage-controlled threshold-type bipolar memristors. Compared to other analog ...

  • Suitability of FinFET introduction into eDRAM cells for operate at sub-threshold level 

    Amat, Esteve; Calomarde Palomino, Antonio; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017)
    Comunicació de congrés
    Accés restringit per política de l'editorial
    This paper explores the feasibility, in terms of performance and reliability, of gain-cell embedded DRAM (eDRAM) to be operative at sub-threshold range, when they are implemented with 10 nm FinFET devices. The use of ...

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