• Review on suitable eDRAM configurations for next nano-metric electronics era 

  Amat, Esteve; Canal Corretger, Ramon; Calomarde Palomino, Antonio; Rubio Sola, Jose Antonio (2018-03)
  Artículo
  Acceso restringido por política de la editorial

  We summarize most of our studies focused on the main reliability issues that can threat the gain-cells eDRAM behavior when it is simulated at the nano-metric device range has been collected in this review. So, to outperform ...
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  Memristive cellular automata for modeling of epileptic brain activity 

  Karamani, Rafallia; Fyrigos, Iosif; Ntinas, Vasileios; Vourkas, Ioannis; Sirakoulis, Georgios Ch.; Rubio Sola, Jose Antonio (2018)
  Texto en actas de congreso
  Acceso abierto

  Cellular Automata (CA) is a nature-inspired and widespread computational model which is based on the collective and emergent parallel computing capability of units (cells) locally interconnected in an abstract brain-like ...
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  Coupled physarum-inspired memristor oscillators for neuron-like operations 

  Ntinas, Vasileios; Vourkas, Ioannis; Sirakoulis, Georgios Ch.; Adamatzky, Andrew; Rubio Sola, Jose Antonio (2018)
  Texto en actas de congreso
  Acceso abierto

  Unconventional computing has been studied intensively, even after the appearance of CMOS technology. Currently, it has returned to the spotlight because CMOS is about to reach its physical limits, given that the constant ...
• Electro-thermal coupling analysis methodology for RF circuits 

  Gómez Salinas, Didac; Dufis, Cédric Yvan; Altet Sanahujes, Josep; Mateo Peña, Diego; González Jiménez, José Luis (2012-09)
  Artículo
  Acceso restringido por política de la editorial

  In this paper an electro-thermal co-simulation methodology suitable for RF circuits is presented. It circumvents traditional transient simulation drawbacks that arise when signals or magnitudes whose frequencies are separated ...
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  Experimental verification of memristor-based material implication NAND operation 

  Maestro Izquierdo, Marcos; Martin Martínez, Javier; Crespo Yepes, Albert; Escudero López, Manuel; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat; Aymerich Humet, Xavier; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017-10-11)
  Artículo
  Acceso abierto

  Memristors are being considered as promising devices for highly dense memory systems as well as the potential basis of new computational paradigms. In this scenario, and in relation with data processing, one of the more ...
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  Single-MOSFET DC thermal sensor for RF-amplifier central frequency extraction 

  Reverter Cubarsí, Ferran; Perpiñà Gilabet, Xavier; Barajas Ojeda, Enrique; León, Javier; Vellvehi, Miquel; Jordà, Xavier; Altet Sanahujes, Josep (2017-09-01)
  Artículo
  Acceso abierto

  © 2017 Elsevier B.V. A DC thermal sensor based on a single metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed to extract high-frequency electrical features of embedded circuits. The MOSFET sensor is ...
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  Strategies to enhance the 3T1D-DRAM cell variability robustness beyond 22 nm 

  Amat Bertran, Esteve; García Almudéver, Carmen; Aymerich, N.; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (2014-10-01)
  Artículo
  Acceso abierto

  3T1D cell has been stated as a valid alternative to be implemented on L1 memory cache to substitute 6T, highly affected by device variability as technology dimensions are reduced. In this work, we have shown that 22 nm ...
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  Prospects of Tunnel FETs in the design of power management circuits for weak energy harvesting dc sources 

  Nunes Cavalheiro, David; Moll Echeto, Francisco de Borja; Valtchev, Stanimir (Institute of Electrical and Electronics Engineers (IEEE), 2018-02-23)
  Artículo
  Acceso abierto

  In this paper, a new tunnel FET (TFET)-based power management circuit (PMC) is proposed for weak dc energy harvesting sources. Thanks to their particular carrier injection mechanisms, TFETs can be used to design efficient ...
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  Experimental study of artificial neural networks using a digital memristor simulator 

  Ntinas, Vasileios; Vourkas, Ioannis; Abusleme, Angel; Sirakoulis, Georgios; Rubio Sola, Jose Antonio (2018-02-01)
  Artículo
  Acceso abierto

  This paper presents a fully digital implementation of a memristor hardware simulator, as the core of an emulator, based on a behavioral model of voltage-controlled threshold-type bipolar memristors. Compared to other analog ...
• Suitability of FinFET introduction into eDRAM cells for operate at sub-threshold level 

  Amat, Esteve; Calomarde Palomino, Antonio; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017)
  Comunicación de congreso
  Acceso restringido por política de la editorial

  This paper explores the feasibility, in terms of performance and reliability, of gain-cell embedded DRAM (eDRAM) to be operative at sub-threshold range, when they are implemented with 10 nm FinFET devices. The use of ...
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  Experimental time evolution study of the HFO-based IMPLY gate operation 

  Maestro, M; Marin-Martinez, J.; Crespo-Yepes, A.; Escudero, Manel; Rodriguez, R.; Nafria, M.; Aymerich, X.; Rubio Sola, Jose Antonio (2018-02-01)
  Artículo
  Acceso abierto

  In the last years, memristor devices have been proposed as key elements to develop a new paradigm to implement logic gates. In particular, the memristor-based material implication (IMPLY) gate has been presented as a ...
• Adaptive fault-tolerant architecture for unreliable device technologies 

  Aymerich, Nivard; Cotofana, Sorin; Rubio Sola, Jose Antonio (CRC Press, Taylor and Francis Group, 2013-06-03)
  Capítulo de libro
  Acceso restringido por política de la editorial

  Nanoelectronic Device Applications Handbook gives a comprehensive snapshot of the state of the art in nanodevices for nanoelectronics applications. Combining breadth and depth, the book includes 68 chapters on topics that ...

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