Recent Submissions

  • Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer 

    García Hernansanz, Rodrigo; Garcia Hemme, E.; Montero, D.; Olea Ariza, Javier; Prado Millán, Álvaro del; Martil, Ignacio; Voz Sánchez, Cristóbal; Gerling Sarabia, Luis Guillermo; Puigdollers i González, Joaquim; Alcubilla González, Ramón (2018-10-01)
    Article
    Open Access
    Heterojunction solar cells based on molybdenum sub-oxide (MoOx) deposited on n-type crystalline silicon have been fabricated. The hole selective character of MoOx is explained by its high workfunction, which causes a strong ...
  • 3D simulations of interdigitated back-contacted crystalline silicon solar cells on thin substrates 

    Jin, Chen; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Calle Martín, Eric; Alcubilla González, Ramón (2018-06-01)
    Article
    Restricted access - publisher's policy
    Interdigitated back contact technology is a promising candidate to be applied to thin crystalline silicon solar cells because of its simpler one-side interconnection while allowing a more flexible front surface treatment. ...
  • Bipolar transistor vertical vertical scaling framework 

    Castañer Muñoz, Luis María; Alcubilla González, Ramón; Benavent, A (1994-12)
    Article
    Restricted access - publisher's policy
    Scaling factors for current and transit time are derived for polysilicon emitter, silicon based heterojunction bipolar transistors. It is shown that a simple set of analytical equations in integral form can be used to ...
  • Analysis of the conductance transient in thick film tin oxide gas sensors 

    Vilanova, X; Llobet Valero, Eduard; Alcubilla González, Ramón; Sueiras, Jl; Correig, X (Elsevier, 1996-03)
    Article
    Restricted access - publisher's policy
    In this paper, we analyse the conductance transient of a Taguchi TGS-822 sensor under a step change in the vapour concentration. A diffusion-limited range in the conductance transient is observed. Adjustments between the ...
  • Space charge recombination in p-n junctions with a discrete and continous trap distribution 

    Pallarès Marzal, Josep; Marsal Garví, Lluís Francesc; Correig, Xavier; Calderer Cardona, Josep; Alcubilla González, Ramón (1997-01)
    Article
    Restricted access - publisher's policy
    Space charge Shockley-Read-Hall recombination currents in the presence of discrete or continuous distributions of recombination centres are analysed. For a single level trap, depending on its position inside the forbidden ...
  • Analytical modelling of bjt neurtral base region under variable injection conditions 

    Bardés Llorensí, Daniel; Alcubilla González, Ramón (1997-08)
    Article
    Restricted access - publisher's policy
    We present a set of closed form analytical solutions of the transport equation in the base of bipolar transistors. The presented 1D solutions hold for variable injection conditions, arbitrary doping profiles and arbitrary ...
  • Electrical properties of PECVD amorphous silicon-carbon alloys from amorphous-crystalline heterojunctions 

    Marsal Amenós, Félix; Pallarés Viña, Miguel Juan; Correig Blanchar, Francesc Xavier; Domínguez Pumar, Manuel; Bardés Llorensí, Daniel; Calderer Cardona, Josep; Alcubilla González, Ramón (1997-08)
    Article
    Restricted access - publisher's policy
    Heterojunction diodes fabricated by plasma enhanced chemical vapour deposition of n-type amorphous silicon carbide on p-type crystalline silicon are analysed by measuring their current-voltage characteristics. Two carrier ...
  • Distribution of recombination currents in the space charge of heterostructure bipolar devices 

    Pallares, J; Marsal, L F; Correig, X; Calderer Cardona, Josep; Alcubilla González, Ramón (1998-01)
    Article
    Open Access
    This paper addresses the problem of the space charge region Shockley-Read-Hall (SRH) recombination currents in heterojunctions with one noncrystalline side. A formulation which generalizes previous works is discussed. The ...
  • Analysis of conduction mechanisms in annealed n-Si1-xCx:H/p-crystalline Si heterojunction diodes for different doping concentrations 

    Marsal, L F; Pallares, J; Correig, X; Orpella García, Alberto; Bardés Llorensí, Daniel; Alcubilla González, Ramón (American Institute of Physics (AIP), 1999-01)
    Article
    Restricted access - publisher's policy
    We fabricated and characterized annealed n-type amorphous Si1-xCx on p-type crystalline silicon heterojunction diodes with three different base doping concentrations: NA~1016,¿1018, and 1020¿cm-3. The conduction mechanisms ...
  • In-situ doped amorphous Si0.8C0.2 emitter bipolar transistors 

    Orpella García, Alberto; Bardés Llorensí, Daniel; Alcubilla González, Ramón; Marsal, L F; Pallarès Marzal, Josep (1999-11)
    Article
    Open Access
    The fabrication and characterization of in situ-doped amorphous Si/sub 0.8/C/sub 0.2/ emitter transistors are presented. Emitter Gummel numbers exceeding 10/sup 14/ s/cm/sup 4/ are reported for the first time in this type ...
  • Microcrystalline silicon thin film transistors obtained by hot-wire CVD 

    Puigdollers i González, Joaquim; Dosev, D; Orpella García, Alberto; Voz Sánchez, Cristóbal; Peiro, D; Bertomeu Balaguero, Joan; Marsal, L F; Pallarés, J; Andreu Batallé, Jordi; Alcubilla González, Ramón (1999-12)
    Article
    Restricted access - publisher's policy
    Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques ...
  • Estimating the impact of azimuth-angle variations on photovoltaic annual energy production 

    Dhimish, Mahmoud; Silvestre Bergés, Santiago (2019-02-06)
    Article
    Open Access
    The performance of a photovoltaic (PV) installation is affected by its tilt and azimuth angles, because these parameters change the amount of solar energy absorbed by the surface of the PV modules. Therefore, this paper ...

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