Recent Submissions

  • Temperature dependent current-voltage characteristics of Au/n-Si Schottky barrier diodes and the effect of transition metal oxides as an interface layer 

    Mahato, Somnath; Puigdollers i González, Joaquim (2018-02-01)
    Article
    Restricted access - publisher's policy
    Temperature dependent current–voltage (I¿V) characteristics of Au/n-type silicon (n-Si) Schottky barrier diodes have been investigated. Three transition metal oxides (TMO) are used as an interface layer between gold and ...
  • Fabrication of silicon oxide microneedles from macroporous silicon 

    Rodríguez Martínez, Ángel; Molinero, D; Valera Cano, Enrique Andrés; Todorov Trifonov, Trifon; Marsal, L F; Pallarès Marzal, Josep; Alcubilla González, Ramón (2005-04)
    Article
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    This paper presents a novel technique for silicon dioxide (SiO2) microneedle fabrication. Microneedles are hollow microcapillaries with tip diameters in the range of micrometers. They can be used in the fabrication of ...
  • Optoelectronic devices based on evaporated pentacene films 

    Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Martín García, Isidro; Muñoz Cervantes, Delfina; Orpella García, Alberto; Vetter, Michael; Alcubilla González, Ramón (2005-01)
    Article
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    Aluminium/pentacene Schottky diodes have been fabricated on glass substrates. An ohmic, transparent front contact was prepared by sputtering a highly conductive indium–tin-oxide layer. The pentacene layer was evaporated ...
  • Phosphorus-diffused silicon solar cell emitters with plasma enhanced chemical vapor deposited silicon carbide 

    Orpella García, Alberto; Vetter, Michael; Ferré Tomas, Rafel; Martín García, Isidro; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2005-01)
    Article
    Restricted access - publisher's policy
    We propose the use of annealed phosphorus doped amorphous silicon carbide layers (a-SiC:H(n)) deposited by PECVD as emitters in solar cells and explore the effect of the annealing time on the emitter saturation current ...
  • Front contact optimization of industrial scale CIGS solar cells for low solar concentration using 2D physical modeling 

    Delgado Sánchez, José María; López González, Juan Miguel; Orpella García, Alberto; Sánchez-Cortezón, Emilio; Alba, Maria D.; López López, Carmen; Alcubilla González, Ramón (2017-02-01)
    Article
    Open Access
    Cu(In,Ga)Se2 (CIGS) technology is one of the best absorber materials with record efficiencies among photovoltaic thin-film technologies (22.3% at lab scale and 16% at large commercial module). Although research on this ...
  • Low-cost thermal s-d air flow sensor 

    Domínguez Pumar, Manuel; Masana Nadal, Francesc; Jimenez Serres, Vicente; Bermejo Broto, Sandra; Amírola Sanz, Jorge; Ballester, Javier; Fueyo, Norberto; Castañer Muñoz, Luis María (2002-10)
    Article
    Open Access
    This paper describes the design and optimization of a hot-wire air flowmeter. A low-cost design of the packaging allows good thermal contact with the airflow, as well as good thermal isolation between the hot and cold ...
  • Fully low temperature interdigitated back-contacted c-Si(n) solar cells based on laser-doping from dielectric stacks 

    Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Muñoz Martín, David; Martín García, Isidro; Voz Sánchez, Cristóbal; Molpeceres Alvarez, Carlos; Alcubilla González, Ramón (2017-09-01)
    Article
    Restricted access - publisher's policy
    This work shows a novel fabrication process of interdigitated back-contacted c-Si(n) solar cells based on laser-doped point contacts. In this approach, all the highly-doped regions have been entirely fabricated through UV ...
  • Analysis of photonic band gaps in two-dimensional photonic crystals with rods covered by a thin interfacial layer 

    Todorov Trifonov, Trifon; Marsal, L F; Rodríguez Martínez, Ángel; Pallarès Marzal, Josep; Alcubilla González, Ramón (2004-11)
    Article
    Restricted access - publisher's policy
    We investigate different aspects of the absolute photonic band gap (PBG) formation in two-dimensional photonic structures consisting of rods covered with a thin dielectric film. Specifically, triangular and honeycomb ...
  • Electrical characterization of pentacene thin-film transistors with polymeric gate dielectric 

    Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Martín García, Isidro; Vetter, Michael; Orpella García, Alberto; Alcubilla González, Ramón (2004-11)
    Article
    Restricted access - publisher's policy
    Pentacene thin films obtained by thermal evaporation at room temperature have been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). The dielectric was spin-cast polymethyl methacrylate (PMMA) ...
  • Effects of symmetry reduction in two-dimensional square and triangular lattices 

    Todorov Trifonov, Trifon; Marsal, L F; Rodríguez Martínez, Ángel; Pallarès Marzal, Josep; Alcubilla González, Ramón (2004-06)
    Article
    Restricted access - publisher's policy
    We investigate the absolute photonic band gap (PBG) formation in two-dimensional (2-D) photonic crystals designed using symmetry reduction approach. The lattice symmetry, shape and orientation of dielectric scatterers ...
  • Pentacene thin-film transistors on polymeric gate dielectric: device fabrication and electrical characterization 

    Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Martín García, Isidro; Orpella García, Alberto; Vetter, Michael; Alcubilla González, Ramón (2004-06)
    Article
    Restricted access - publisher's policy
    Pentacene thin-film transistors using polymethyl methacrylate as a gate dielectric have been fabricated. A bottom gate, inverted staggered structure was selected to study the influence of the dielectric on the device ...
  • Pentacene thin-film transistors with polymeric gate dielectric 

    Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella García, Alberto; Quidant, Romain; Martín García, Isidro; Vetter, Michael; Alcubilla González, Ramón (2004-06)
    Article
    Restricted access - publisher's policy
    Pentacene thin-film transistors have been obtained using polymethyl methacrylate as a gate dielectric. The maximum process temperature was 170 °C, which corresponds to the baking of the polymeric gate dielectric. These ...

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