El grup consta de 18 membres doctors. Es un grup de llarga trajectòria l’activitat del qual es centra en el desenvolupament i fabricació de dispositius semiconductors. Per això disposa d’un laboratori de fabricació “Sala Blanca” que constitueix un element vertebrador de l’activitat del grup. En particular la recerca es centra en les cèl•lules solars fotovoltaiques i en el desenvolupament de tecnologies de fabricació més econòmiques: tecnologia laser per cèl•lules solars de Silici, fabricació de cèl•lules HIT ( Heterojunction with thin Intrinsec layer ) , IBC (Intedigitated Back Contact), capes de passivació, cèl•lules orgàniques, termofotovoltaic. Un altre focus d’activitat son els cristalls fotònics 3D ja sia en Silici com col•loïdals i tecnologies de manipulació de líquids a escala micromètrica. Finalment també treballem en el control de càrrega en dielèctrics de dispositius MEMS i MOS, i en desenvolupament, caracterització i control de sensors, en particular anemomètrics i químics.

Research in micro and nanotechnology devices and their application in microelectronics, MEMSs, photonics and photovoltaic solar energy.

Research in micro and nanotechnology devices and their application in microelectronics, MEMSs, photonics and photovoltaic solar energy.

Recent Submissions

  • 3D simulations of interdigitated back-contacted crystalline silicon solar cells on thin substrates 

    Jin, Chen; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Calle Martín, Eric; Alcubilla González, Ramón (2018-06-01)
    Article
    Restricted access - publisher's policy
    Interdigitated back contact technology is a promising candidate to be applied to thin crystalline silicon solar cells because of its simpler one-side interconnection while allowing a more flexible front surface treatment. ...
  • Bipolar transistor vertical vertical scaling framework 

    Castañer Muñoz, Luis María; Alcubilla González, Ramón; Benavent, A (1994-12)
    Article
    Restricted access - publisher's policy
    Scaling factors for current and transit time are derived for polysilicon emitter, silicon based heterojunction bipolar transistors. It is shown that a simple set of analytical equations in integral form can be used to ...
  • Analysis of the conductance transient in thick film tin oxide gas sensors 

    Vilanova, X; Llobet Valero, Eduard; Alcubilla González, Ramón; Sueiras, Jl; Correig, X (Elsevier, 1996-03)
    Article
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    In this paper, we analyse the conductance transient of a Taguchi TGS-822 sensor under a step change in the vapour concentration. A diffusion-limited range in the conductance transient is observed. Adjustments between the ...
  • Space charge recombination in p-n junctions with a discrete and continous trap distribution 

    Pallarès Marzal, Josep; Marsal Garví, Lluís Francesc; Correig, Xavier; Calderer Cardona, Josep; Alcubilla González, Ramón (1997-01)
    Article
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    Space charge Shockley-Read-Hall recombination currents in the presence of discrete or continuous distributions of recombination centres are analysed. For a single level trap, depending on its position inside the forbidden ...
  • Analytical modelling of bjt neurtral base region under variable injection conditions 

    Bardés Llorensí, Daniel; Alcubilla González, Ramón (1997-08)
    Article
    Restricted access - publisher's policy
    We present a set of closed form analytical solutions of the transport equation in the base of bipolar transistors. The presented 1D solutions hold for variable injection conditions, arbitrary doping profiles and arbitrary ...
  • Electrical properties of PECVD amorphous silicon-carbon alloys from amorphous-crystalline heterojunctions 

    Marsal Amenós, Félix; Pallarés Viña, Miguel Juan; Correig Blanchar, Francesc Xavier; Domínguez Pumar, Manuel; Bardés Llorensí, Daniel; Calderer Cardona, Josep; Alcubilla González, Ramón (1997-08)
    Article
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    Heterojunction diodes fabricated by plasma enhanced chemical vapour deposition of n-type amorphous silicon carbide on p-type crystalline silicon are analysed by measuring their current-voltage characteristics. Two carrier ...
  • Distribution of recombination currents in the space charge of heterostructure bipolar devices 

    Pallares, J; Marsal, L F; Correig, X; Calderer Cardona, Josep; Alcubilla González, Ramón (1998-01)
    Article
    Open Access
    This paper addresses the problem of the space charge region Shockley-Read-Hall (SRH) recombination currents in heterojunctions with one noncrystalline side. A formulation which generalizes previous works is discussed. The ...
  • Analysis of conduction mechanisms in annealed n-Si1-xCx:H/p-crystalline Si heterojunction diodes for different doping concentrations 

    Marsal, L F; Pallares, J; Correig, X; Orpella García, Alberto; Bardés Llorensí, Daniel; Alcubilla González, Ramón (American Institute of Physics (AIP), 1999-01)
    Article
    Restricted access - publisher's policy
    We fabricated and characterized annealed n-type amorphous Si1-xCx on p-type crystalline silicon heterojunction diodes with three different base doping concentrations: NA~1016,¿1018, and 1020¿cm-3. The conduction mechanisms ...
  • In-situ doped amorphous Si0.8C0.2 emitter bipolar transistors 

    Orpella García, Alberto; Bardés Llorensí, Daniel; Alcubilla González, Ramón; Marsal, L F; Pallarès Marzal, Josep (1999-11)
    Article
    Open Access
    The fabrication and characterization of in situ-doped amorphous Si/sub 0.8/C/sub 0.2/ emitter transistors are presented. Emitter Gummel numbers exceeding 10/sup 14/ s/cm/sup 4/ are reported for the first time in this type ...
  • Microcrystalline silicon thin film transistors obtained by hot-wire CVD 

    Puigdollers i González, Joaquim; Dosev, D; Orpella García, Alberto; Voz Sánchez, Cristóbal; Peiro, D; Bertomeu Balaguero, Joan; Marsal, L F; Pallarés, J; Andreu Batallé, Jordi; Alcubilla González, Ramón (1999-12)
    Article
    Restricted access - publisher's policy
    Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques ...
  • Estimating the impact of azimuth-angle variations on photovoltaic annual energy production 

    Dhimish, Mahmoud; Silvestre Bergés, Santiago (2019-02-06)
    Article
    Open Access
    The performance of a photovoltaic (PV) installation is affected by its tilt and azimuth angles, because these parameters change the amount of solar energy absorbed by the surface of the PV modules. Therefore, this paper ...
  • Single-crystalline metal oxide, resistive gas sensors advances and perspectives 

    Llobet Valero, Eduard; Navarrete, eric; Annanouch, F.E.; Alvarado, M.; Gonzalez, E.; Ramirez, J.L.; Romero, A.; Vilanova, Xavier; Domínguez Pumar, Manuel; Vallejos, S.; Gracia, Isabel (Institute of Electrical and Electronics Engineers (IEEE), 2018)
    Conference report
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    Here we review recent results on the synthesis of single-crystalline metal oxide nanomaterials and their integration in resistive gas sensing devices. Emphasis is put on the integration of such nanomaterials in a wide ...

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