El grup consta de 18 membres doctors. Es un grup de llarga trajectòria l’activitat del qual es centra en el desenvolupament i fabricació de dispositius semiconductors. Per això disposa d’un laboratori de fabricació “Sala Blanca” que constitueix un element vertebrador de l’activitat del grup. En particular la recerca es centra en les cèl•lules solars fotovoltaiques i en el desenvolupament de tecnologies de fabricació més econòmiques: tecnologia laser per cèl•lules solars de Silici, fabricació de cèl•lules HIT ( Heterojunction with thin Intrinsec layer ) , IBC (Intedigitated Back Contact), capes de passivació, cèl•lules orgàniques, termofotovoltaic. Un altre focus d’activitat son els cristalls fotònics 3D ja sia en Silici com col•loïdals i tecnologies de manipulació de líquids a escala micromètrica. Finalment també treballem en el control de càrrega en dielèctrics de dispositius MEMS i MOS, i en desenvolupament, caracterització i control de sensors, en particular anemomètrics i químics.

Research in micro and nanotechnology devices and their application in microelectronics, MEMSs, photonics and photovoltaic solar energy.

Research in micro and nanotechnology devices and their application in microelectronics, MEMSs, photonics and photovoltaic solar energy.

Recent Submissions

  • Acceleration of the measurement time of thermopiles using sigma-delta control 

    Domínguez Pumar, Manuel; perez, eduard; Ramon, Marina; Jiménez Serres, Vicente; Bermejo Broto, Sandra; Pons Nin, Joan (Multidisciplinary Digital Publishing Institute (MDPI), 2019-07-18)
    Article
    Open Access
    This work presents a double sliding mode control designed for accelerating the measurement of heat fluxes using thermopiles. The slow transient response generated in the thermopile, when it is placed in contact with the ...
  • Origin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor 

    Ros, Eloi; Puigdollers i González, Joaquim; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal (Institute of Electrical and Electronics Engineers (IEEE), 2019)
    Conference report
    Open Access
    In this work, we have fabricated and studied p-type picene thin-film transistors. Although the devices exhibited good electrical performance with high field-effect mobility (up to 1.3 cm2/V¿s) and on/off ratios above ...
  • Desky plošných spoju (DPS) – návrh a výroba 

    Silvestre Bergés, Santiago; Salazar Soler, Jorge; Marzo, Jordi (Czech Technical University in Prague, 2019-06-13)
    Book
    Open Access
    Tento materiál popisuje hlavní charakteristiky desek plošných spoju (DPS). V první kapitole je shrnuta strucná historie. Dále jsou popsány procesy návrhu a výroby DPS a nakonec je v poslední kapitole uvedena ...
  • Svet Internetu vecí 

    Silvestre Bergés, Santiago; Salazar Soler, Jorge (Czech Technical University of Prague. Faculty of Electrical Engineering, 2019-05-01)
    Book
    Open Access
    Tento modul popisuje svet Internetu vecí z anglického Internet of Things (IoT). Predstavuje hlavní technologie používané v Internetu vecí spolu s platformami a IoT zarízeními. Seznam reálných aplikací v Internetu vecí je ...
  • Printed Circuit Board (PCB) design process and fabrication 

    Silvestre Bergés, Santiago; Salazar Soler, Jorge; Marzo, Jordi (Czech Technical University of Prague. Faculty of Electrical Engineering, 2019-05-06)
    Book
    Open Access
    This module describes main characteristics of Printed Circuit Boards (PCBs). A brief history of PCBs is introduced in the first chapter. Then, the design processes and the fabrication of PCBs are addressed and finally a ...
  • Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer 

    García Hernansanz, Rodrigo; Garcia Hemme, E.; Montero, D.; Olea Ariza, Javier; Prado Millán, Álvaro del; Martil, Ignacio; Voz Sánchez, Cristóbal; Gerling Sarabia, Luis Guillermo; Puigdollers i González, Joaquim; Alcubilla González, Ramón (2018-10-01)
    Article
    Open Access
    Heterojunction solar cells based on molybdenum sub-oxide (MoOx) deposited on n-type crystalline silicon have been fabricated. The hole selective character of MoOx is explained by its high workfunction, which causes a strong ...
  • Electron selective contacts based on Al2O3/TiO2/ZnO stacks for crystalline silicon solar cells 

    Zafoschnig, Lisa; Ortega Villasclaras, Pablo Rafael; Martín García, Isidro; Masmitjà Rusiñol, Gerard; López Rodríguez, Gema; Alcubilla González, Ramón (2018)
    Conference lecture
    Restricted access - publisher's policy
    In the last years, our research group has focused on the development of Interdigitated Back Contacted (IBC) solar cells based on transition metal oxides. In particular, a very thin Al2O3/TiO2 stack deposited by ALD has ...
  • 3D simulations of interdigitated back-contacted crystalline silicon solar cells on thin substrates 

    Jin, Chen; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Calle Martín, Eric; Alcubilla González, Ramón (2018-06-01)
    Article
    Restricted access - publisher's policy
    Interdigitated back contact technology is a promising candidate to be applied to thin crystalline silicon solar cells because of its simpler one-side interconnection while allowing a more flexible front surface treatment. ...
  • Bipolar transistor vertical vertical scaling framework 

    Castañer Muñoz, Luis María; Alcubilla González, Ramón; Benavent, A (1994-12)
    Article
    Restricted access - publisher's policy
    Scaling factors for current and transit time are derived for polysilicon emitter, silicon based heterojunction bipolar transistors. It is shown that a simple set of analytical equations in integral form can be used to ...
  • Analysis of the conductance transient in thick film tin oxide gas sensors 

    Vilanova, X; Llobet Valero, Eduard; Alcubilla González, Ramón; Sueiras, Jl; Correig, X (Elsevier, 1996-03)
    Article
    Restricted access - publisher's policy
    In this paper, we analyse the conductance transient of a Taguchi TGS-822 sensor under a step change in the vapour concentration. A diffusion-limited range in the conductance transient is observed. Adjustments between the ...
  • Space charge recombination in p-n junctions with a discrete and continous trap distribution 

    Pallarès Marzal, Josep; Marsal Garví, Lluís Francesc; Correig, Xavier; Calderer Cardona, Josep; Alcubilla González, Ramón (1997-01)
    Article
    Restricted access - publisher's policy
    Space charge Shockley-Read-Hall recombination currents in the presence of discrete or continuous distributions of recombination centres are analysed. For a single level trap, depending on its position inside the forbidden ...
  • Analytical modelling of bjt neurtral base region under variable injection conditions 

    Bardés Llorensí, Daniel; Alcubilla González, Ramón (1997-08)
    Article
    Restricted access - publisher's policy
    We present a set of closed form analytical solutions of the transport equation in the base of bipolar transistors. The presented 1D solutions hold for variable injection conditions, arbitrary doping profiles and arbitrary ...

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