El grup consta de 18 membres doctors. Es un grup de llarga trajectòria l’activitat del qual es centra en el desenvolupament i fabricació de dispositius semiconductors. Per això disposa d’un laboratori de fabricació “Sala Blanca” que constitueix un element vertebrador de l’activitat del grup. En particular la recerca es centra en les cèl•lules solars fotovoltaiques i en el desenvolupament de tecnologies de fabricació més econòmiques: tecnologia laser per cèl•lules solars de Silici, fabricació de cèl•lules HIT ( Heterojunction with thin Intrinsec layer ) , IBC (Intedigitated Back Contact), capes de passivació, cèl•lules orgàniques, termofotovoltaic. Un altre focus d’activitat son els cristalls fotònics 3D ja sia en Silici com col•loïdals i tecnologies de manipulació de líquids a escala micromètrica. Finalment també treballem en el control de càrrega en dielèctrics de dispositius MEMS i MOS, i en desenvolupament, caracterització i control de sensors, en particular anemomètrics i químics.

http://futur.upc.edu/MNT

Research in micro and nanotechnology devices and their application in microelectronics, MEMSs, photonics and photovoltaic solar energy.

http://futur.upc.edu/MNT

Research in micro and nanotechnology devices and their application in microelectronics, MEMSs, photonics and photovoltaic solar energy.

http://futur.upc.edu/MNT

Enviaments recents

  • Low temperature back-surface-field contacts deposited by hot-wire CVD for heterojunction solar cells 

    Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Martín García, Isidro; Orpella García, Alberto; Alcubilla González, Ramón; Villar, F; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Roca-I-Cabarrocas, P (2008-08)
    Article
    Accés obert
    The growing interest in using thinner wafers (< 200 µm) requires the development of low temperature passivation strategies for the back contact of heterojunction solar cells. In this work, we investigate low temperature ...
  • Colloidal crystal wires 

    Tymczenko, M; Marsal, L E; Todorov Trifonov, Trifon; Rodriguez, Isabelle; Ramiro-Manzano, F; Pallares, J; Rodríguez Martínez, Ángel; Alcubilla González, Ramón; Meseguer, F (2008-06-18)
    Article
    Accés restringit per política de l'editorial
    Several configurations of colloidal wires are obtained by infiltration of charge-stabilized polystyrene spheres into cylindrical pores of a silicon membrane (see figure). As channel dimensions are comparable to those of ...
  • Increased conductivity of a hole transport layer due to oxidation by a molecular nanomagnet - art. no. 096110 

    Cheylan, Stephanie; Puigdollers i González, Joaquim; Bolink, H J; Coronado, E; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Badenes, G (American Institute of Physics (AIP), 2008-05)
    Article
    Accés restringit per política de l'editorial
    Thin film transistors based on polyarylamine poly(N,N'-diphenyl-N,N'bis(4-hexylphenyl)-[1,1'biphenyl]-4,4'-diamine (pTPD) were fabricated using spin coating in order to measure the mobility of pTPD upon oxidation. Partially ...
  • First use of macroporous silicon loaded with catalyst film for a chemical reaction: a microreformer for producing hydrogen from ethanol steam reforming 

    Llorca Piqué, Jordi; Casanovas Grau, Albert; Todorov Trifonov, Trifon; Rodríguez Martínez, Ángel; Alcubilla González, Ramón (2008-04-25)
    Article
    Accés restringit per política de l'editorial
    Macroporous silicon with millions of parallel microchannels per square centimeter can be used as a micromonolithic support for high-speed catalysis in miniaturized systems, opening a new and exciting field of research and ...
  • Optical properties of 3D macroporous silicon structures 

    Garin Escriva, Moises; Todorov Trifonov, Trifon; Rodríguez Martínez, Ángel; Marsal Garví, Lluís Francesc; Alcubilla González, Ramón (2008-04-15)
    Article
    Accés restringit per política de l'editorial
    We study the optical properties of three-dimensional (3D) microstructures fabricated by electrochemical etching of macroporous silicon with modulated pore diameter. Optical measurements along the pore axis reveal photonic ...
  • Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiCxNy:H(n) alloys 

    Ferre, R; Orpella García, Alberto; Muñoz Cervantes, Delfina; Martín García, Isidro; Recart, F; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Cabarrocas, Roca I P; Alcubilla González, Ramón (2008-03)
    Article
    Accés restringit per política de l'editorial
    Hydrogenated and phosphorus-doped amorphous silicon carbonitride films (a-SiCxNy:H(n)) were deposited by plasma-enhanced chemical vapor deposition (PECVD) on crystalline silicon surface in order to explore surface passivation ...
  • Macroporous silicon: a versatile material for 3D structure fabrication 

    Todorov Trifonov, Trifon; Rodríguez Martínez, Ángel; Marsal, L F; Pallares, J; Alcubilla González, Ramón (2008-02)
    Article
    Accés restringit per política de l'editorial
    This work focuses on the fabrication of three-dimensional (3D) microstructures by electrochemical etching of n-type silicon. We exploit the possibility of modulating the pore diameter along the growing direction to produce ...
  • Characterization of 2D macroporous silicon photonic crystals: improving the photonic band identification in angular-dependent reflection spectroscopy in the mid-IR 

    Král, Z; Ferré Burrull, José; Pallarès Marzal, Josep; Todorov Trifonov, Trifon; Rodríguez Martínez, Ángel; Alcubilla González, Ramón; Marsal, L F (2008-02)
    Article
    Accés restringit per política de l'editorial
    We report the experimental characterization of two-dimensional (2D) macroporous silicon photonic crystals using angular-dependent reflectance spectroscopy in the mid-IR region. We have investigated different sample structures ...
  • Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200 °C 

    Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Martín García, Isidro; Orpella García, Alberto; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Villar, F; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi; Damon-Lacoste, J; Cabarrocas, Roca I P (2008-01)
    Article
    Accés restringit per política de l'editorial
    In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a thin intrinsic hydrogenated amorphous ...
  • Polymer microfibers obtained using porous silicon templates 

    Marsal Garví, Lluís Francesc; Formentín, P.; Palacios, R.; Todorov Trifonov, Trifon; Ferré Burrull, José; Rodríguez Martínez, Ángel; Pallarès Marzal, Josep; Alcubilla González, Ramón (2008)
    Article
    Accés restringit per política de l'editorial
    The deposition of specific materials into ordered pores arranged in a regular lattice allows the fabrication of ordered fiber arrays. Porous silicon is an attractive candidate for use as a template because the porosity and ...
  • Improving the efficiency of light-emitting diode based on a thiophene polymer containing a cyano group 

    Cheylan, Stephanie; Bolink, H J; Fraleoni-Morgera, A; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Mencarelli, I; Setti, L; Alcubilla González, Ramón; Badenes, G (2007-12)
    Article
    Accés restringit per política de l'editorial
    We report on the overall improvement of a single layer organic light-emitting diode device based on poly{[3-hethylthiophene]-co-3-[2-(p-cyano-phenoxy)ethyl]thiophene} or namely PTOPhCN. This polymer was recently developed ...
  • Recombination rates in heterojunction silicon solar cells analyzed by impedance spectroscopy at forward bias and under 

    Mora-Seró, I; Luo, Y; Garcia Belmonte, G; Bisquert, J; Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (2007-12)
    Article
    Accés restringit per política de l'editorial
    Impedance spectroscopy (at forward bias and under illumination) of solar cells comprised thin hydrogenated amorphous silicon (a-Si:H) films deposited on crystalline silicon (c-Si) wafers was analyzed in terms of ac equivalent ...

Mostra'n més