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N-type doping of SiC-passivated Ge by pulsed laser melting towards the development of interdigitated back contact thermophotovoltaic devices

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10.1016/j.solmat.2021.111463
 
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Jiménez Pagán, Alba
Napolitani, Enrico
Datas Medina, Alejandro
Martín García, IsidroMés informacióMés informacióMés informació
López Rodríguez, GemaMés informacióMés informacióMés informació
Cabrero Piris, Mariona
Sgarbossa, Francesco
Milazzo, Ruggero
Carturan, Sara Maria
De Salvador, Davide
López García, Iñaki
Ryu, Yu Kyoung
Martinez Rodrigo, Javier
del Cañizo Nadal, Carlos
Document typeArticle
Defense date2022-01-01
Rights accessOpen Access
Attribution-NonCommercial-NoDerivs 4.0 International
This work is protected by the corresponding intellectual and industrial property rights. Except where otherwise noted, its contents are licensed under a Creative Commons license : Attribution-NonCommercial-NoDerivs 4.0 International
ProjectDISPOSITIVOS DE GERMANIO DE ALTA EFICIENCIA PARA APLICACIONES TERMOFOTOVOLTAICAS DE BAJO COSTE (AEI-PID2020-115719RB-C21)
Abstract
In this article, a method for phosphorous (n-type) doping of germanium based on spin-on dopant sources and Pulsed Laser Melting (PLM) throughout an amorphous silicon carbide (a-SixC1-x:H) layer, which provides both surface passivation and electrical isolation, has been demonstrated, paving the way towards the development of Ge-based interdigitated back contact thermophotovoltaic devices. This method offers simultaneous opening of the a-SixC1-x:H layer and creation of a heavily doped region underneath without using photolithographic steps, eventually enabling a low-cost and scalable manufacturing process. This article focuses on the optimization of the n+/p junction formation by studying the effect of different laser energy fluences and number of pulses on the diffusion profiles measured by secondary ion mass spectrometry, and on the electrical performance characterized by Van der Pauw-Hall technique. Additionally, the crystalline quality after PLM has been analyzed by Rutherford backscattering measurements in channeling conditions, high-resolution X-Ray diffraction and transmission electron microscopy. High level of donor activation (up to 1·1019 cm- 3 ), low sheet resistance (˜50 O/¿), and high mobility (275–700 cm2 /V·s) have been obtained, with a weaker dependency of these parameters on the explored laser energy fluence range. A prototype diode has been developed demonstrating a rectifying behavior but with high saturation current densities. Point-like contact formation will be implemented in future works to reduce the laser irradiated area, and thus, improve the surface passivation and device characteristics.
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© 2022 Elsevier. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
CitationJiménez, A. [et al.]. N-type doping of SiC-passivated Ge by pulsed laser melting towards the development of interdigitated back contact thermophotovoltaic devices. "Solar energy materials and solar cells", 1 Gener 2022, vol. 235, núm. article 111463. 
URIhttp://hdl.handle.net/2117/367008
DOI10.1016/j.solmat.2021.111463
ISSN0927-0248
Publisher versionhttps://www.sciencedirect.com/science/article/abs/pii/S0927024821005031
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  • MNT - Grup de Recerca en Micro i Nanotecnologies - Articles de revista [346]
  • Departament d'Enginyeria Electrònica - Articles de revista [1.853]
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