Mostra el registre d'ítem simple
Comparison between the density-of-states of picene transistors measured in air and under vacuum
dc.contributor.author | Voz Sánchez, Cristóbal |
dc.contributor.author | Marsal, Albert |
dc.contributor.author | Moreno Sierra, César |
dc.contributor.author | Puigdollers i González, Joaquim |
dc.contributor.author | Alcubilla González, Ramón |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2012-01-17T17:41:02Z |
dc.date.available | 2012-01-17T17:41:02Z |
dc.date.created | 2012-01 |
dc.date.issued | 2012-01 |
dc.identifier.citation | Voz, C. [et al.]. Comparison between the density-of-states of picene transistors measured in air and under vacuum. "Synthetic metals", Gener 2012, vol. 161, núm. 23-24, p. 2554-2557. |
dc.identifier.issn | 0379-6779 |
dc.identifier.uri | http://hdl.handle.net/2117/14608 |
dc.description.abstract | Picene has recently attracted much attention as the active layer in organic thin-film transistors because of its good performance in air. In this work, we have fabricated picene thin-film transistors that exhibit field-effect mobilities up to 1.3 cm2 V−1 s−1 and on/off ratios above 105 in ambient conditions. These devices have been electrically characterized over the temperature range 300–360 K in air and also under vacuum conditions. In particular, the thermal activation energy of the channel conductance as a function of the gate bias has been measured. The dependence of the activation energy on the gate bias corresponds to a gradual shift of the Fermi level towards the HOMO level as more gap states are filled by trapped holes. The density-of-states can be estimated from the derivative of the activation energy with respect to gate bias. The calculated density-of-states is compared for devices measured in air and under vacuum conditions. These results can help to understand the gas sensing capability of picene, together with its enhanced electrical performance after air exposure. |
dc.format.extent | 4 p. |
dc.language.iso | eng |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors |
dc.subject.lcsh | Thin film devices |
dc.subject.lcsh | Integrated circuits |
dc.title | Comparison between the density-of-states of picene transistors measured in air and under vacuum |
dc.type | Article |
dc.subject.lemac | Microelectrònica |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1016/j.synthmet.2011.10.009 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | http://www.sciencedirect.com/science/article/pii/S0379677911004498 |
dc.rights.access | Restricted access - publisher's policy |
local.identifier.drac | 9419366 |
dc.description.version | Postprint (published version) |
dc.relation.projectid | info:eu-repo/grantAgreement/EC/FP7/227127/EU/Smart light collecting system for the efficiency enhancement of solar cells/EPHOCELL |
local.citation.author | Voz, C.; Marsal, A.; Moreno, C.; Puigdollers, J.; Alcubilla, R. |
local.citation.publicationName | Synthetic metals |
local.citation.volume | 161 |
local.citation.number | 23-24 |
local.citation.startingPage | 2554 |
local.citation.endingPage | 2557 |
Fitxers d'aquest items
Aquest ítem apareix a les col·leccions següents
-
Articles de revista [346]
-
Articles de revista [1.729]