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Electronic and structural characterisation of a tetrathiafulvalene compound as a potential candidate for ambipolar transport properties

dc.contributor.authorOton, Francisco
dc.contributor.authorPfattner, Raphael
dc.contributor.authorPavlica, Egon
dc.contributor.authorOlivier, Yoann
dc.contributor.authorBratina, Gvido
dc.contributor.authorCornil, Jerome
dc.contributor.authorPuigdollers i González, Joaquim
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.authorFontrodona, Xavier
dc.contributor.authorMas Torrent, Marta
dc.contributor.authorVeciana Miró, Jaume
dc.contributor.authorRovira Angulo, Concepció
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2018-11-19T17:07:45Z
dc.date.issued2011
dc.identifier.citationOton, F., Pfattner, R., Pavlica, E., Olivier, Y., Bratina, G., Cornil, J., Puigdollers, J., Alcubilla, R., Fontrodona, X., Mas, M., Veciana, J., Rovira, C. Electronic and structural characterisation of a tetrathiafulvalene compound as a potential candidate for ambipolar transport properties. "Crystengcomm", 2011, vol. 13, núm. 22, p. 6597-6600.
dc.identifier.issn1466-8033
dc.identifier.urihttp://hdl.handle.net/2117/124680
dc.description.abstractWe report a joint experimental and theoretical study on the electronic structure and the solid-state organisation of bis(naphthoquinone)-tetrathiafulvalene (BNQ-TTF) as a promising ambipolar semiconductor. Accordingly, organic field-effect transistors (OFETs) fabricated with this material show both hole and electron transport for the first time in TTF derivatives.
dc.format.extent4 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors
dc.subject.lcshOrganic semiconductors
dc.subject.otherField-effect transistors
dc.subject.otherHigh-mobility
dc.subject.otherOrganic semiconductors
dc.subject.otherMolecules
dc.titleElectronic and structural characterisation of a tetrathiafulvalene compound as a potential candidate for ambipolar transport properties
dc.typeArticle
dc.subject.lemacSemiconductors orgànics
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1039/c1ce05559c
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://pubs.rsc.org/en/content/articlelanding/2011/ce/c1ce05559c
dc.rights.accessRestricted access - publisher's policy
local.identifier.drac8627171
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
local.citation.authorOton, F.; Pfattner, R.; Pavlica, E.; Olivier, Y.; Bratina, G.; Cornil, J.; Puigdollers, J.; Alcubilla, R.; Fontrodona, X.; Mas, M.; Veciana, J.; Rovira, C.
local.citation.publicationNameCrystengcomm
local.citation.volume13
local.citation.number22
local.citation.startingPage6597
local.citation.endingPage6600


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