Pentacene thin-film transistors with polymeric gate dielectric

Abstract

Pentacene thin-film transistors have been obtained using polymethyl methacrylate as a gate dielectric. The maximum process temperature was 170 °C, which corresponds to the baking of the polymeric gate dielectric. These devices presented good electrical performances with field-effect mobilities of 0.01 cm2 V-1 s-1 and low threshold voltages (-15 V). Atomic force microscopy studies reveal that the microstructure of pentacene layers is strongly conditioned by the surface morphology of the dielectric.