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dc.contributor.authorPuigdollers i González, Joaquim
dc.contributor.authorVoz Sánchez, Cristóbal
dc.contributor.authorOrpella García, Alberto
dc.contributor.authorMartín García, Isidro
dc.contributor.authorSoler Vilamitjana, David
dc.contributor.authorFonrodona, Marta
dc.contributor.authorBertomeu Balaguero, Joan
dc.contributor.authorAndreu Batallé, Jordi
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2018-01-18T17:12:41Z
dc.date.issued2002-04
dc.identifier.citationPuigdollers, J., Voz, C., Orpella, A., Martin, I., Soler, D., Fonrodona, M., Bertomeu, J., Andreu Batallé, Jordi, Alcubilla, R. Electronic transport in low temperarture nanocrystalline silicon thin-film transistors obtained by hot-wire CVD. "Journal of non-crystalline solids", Abril 2002, vol. 299-302, p. 400-404.
dc.identifier.issn0022-3093
dc.identifier.urihttp://hdl.handle.net/2117/112947
dc.description.abstractHydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). These devices were electrically characterised by measuring in vacuum the output and transfer characteristics for different temperatures. The field-effect mobility showed a thermally activated behaviour which could be attributed to carrier trapping at the band tails, as in hydrogenated amorphous silicon (a-Si:H), and potential barriers for the electronic transport. Trapped charge at the interfaces of the columns, which are typical in nc-Si:H, would account for these barriers. By using the Levinson technique, the quality of the material at the column boundaries could be studied. Finally, these results were interpreted according to the particular microstructure of nc-Si:H.
dc.format.extent5 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors
dc.subjectÀrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors
dc.subject.lcshThin films
dc.subject.lcshPorous silicon
dc.subject.otherC185
dc.subject.otherE255
dc.subject.otherN100
dc.subject.otherS180
dc.subject.otherT190
dc.titleElectronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by hot-wire CVD
dc.typeArticle
dc.subject.lemacCapes fines
dc.subject.lemacSilici porós
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1016/S0022-3093(01)01015-8
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttps://www.sciencedirect.com/science/article/pii/S0022309301010158
dc.rights.accessRestricted access - publisher's policy
drac.iddocument763473
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
upcommons.citation.authorPuigdollers, J., Voz, C., Orpella, A., Martin, I., Soler, D., Fonrodona, M., Bertomeu, J., Andreu Batallé, Jordi, Alcubilla, R.
upcommons.citation.publishedtrue
upcommons.citation.publicationNameJournal of non-crystalline solids
upcommons.citation.volume299-302
upcommons.citation.startingPage400
upcommons.citation.endingPage404


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