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Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by hot-wire CVD
dc.contributor.author | Puigdollers i González, Joaquim |
dc.contributor.author | Voz Sánchez, Cristóbal |
dc.contributor.author | Orpella García, Alberto |
dc.contributor.author | Martín García, Isidro |
dc.contributor.author | Soler Vilamitjana, David |
dc.contributor.author | Fonrodona, Marta |
dc.contributor.author | Bertomeu Balaguero, Joan |
dc.contributor.author | Andreu Batallé, Jordi |
dc.contributor.author | Alcubilla González, Ramón |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2018-01-18T17:12:41Z |
dc.date.issued | 2002-04 |
dc.identifier.citation | Puigdollers, J., Voz, C., Orpella, A., Martin, I., Soler, D., Fonrodona, M., Bertomeu, J., Andreu Batallé, Jordi, Alcubilla, R. Electronic transport in low temperarture nanocrystalline silicon thin-film transistors obtained by hot-wire CVD. "Journal of non-crystalline solids", Abril 2002, vol. 299-302, p. 400-404. |
dc.identifier.issn | 0022-3093 |
dc.identifier.uri | http://hdl.handle.net/2117/112947 |
dc.description.abstract | Hydrogenated nanocrystalline silicon (nc-Si:H) obtained by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature (150 °C) has been incorporated as the active layer in bottom-gate thin-film transistors (TFTs). These devices were electrically characterised by measuring in vacuum the output and transfer characteristics for different temperatures. The field-effect mobility showed a thermally activated behaviour which could be attributed to carrier trapping at the band tails, as in hydrogenated amorphous silicon (a-Si:H), and potential barriers for the electronic transport. Trapped charge at the interfaces of the columns, which are typical in nc-Si:H, would account for these barriers. By using the Levinson technique, the quality of the material at the column boundaries could be studied. Finally, these results were interpreted according to the particular microstructure of nc-Si:H. |
dc.format.extent | 5 p. |
dc.language.iso | eng |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors |
dc.subject | Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors |
dc.subject.lcsh | Thin films |
dc.subject.lcsh | Porous silicon |
dc.subject.other | C185 |
dc.subject.other | E255 |
dc.subject.other | N100 |
dc.subject.other | S180 |
dc.subject.other | T190 |
dc.title | Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by hot-wire CVD |
dc.type | Article |
dc.subject.lemac | Capes fines |
dc.subject.lemac | Silici porós |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1016/S0022-3093(01)01015-8 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | https://www.sciencedirect.com/science/article/pii/S0022309301010158 |
dc.rights.access | Restricted access - publisher's policy |
local.identifier.drac | 763473 |
dc.description.version | Postprint (published version) |
dc.date.lift | 10000-01-01 |
local.citation.author | Puigdollers, J.; Voz, C.; Orpella, A.; Martin, I.; Soler, D.; Fonrodona, M.; Bertomeu, J.; Andreu Batallé, Jordi; Alcubilla, R. |
local.citation.publicationName | Journal of non-crystalline solids |
local.citation.volume | 299-302 |
local.citation.startingPage | 400 |
local.citation.endingPage | 404 |
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