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Llistant per Autor López González, Juan Miguel

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Mostrant resultats 1 a 7 de 7
Vista preliminarDataTítolAutor(s)
20133D simulations of back-contact back-junction c-Si(P) solar cells with doped point contactsCarrió, D.; Ortega Villasclaras, Pablo Rafael; López, Gema; López González, Juan Miguel; Martín García, Isidro; Voz Sánchez, Cristóbal; Alcubilla González, Ramón
1-oct-2010Analytical modelling of 200 GHz SiGe HBT high-frequency noise parametersLópez González, Juan Miguel
2013DopLaCell: a new c-Si solar cell based on laser processing of dielectric filmsMartín García, Isidro; López González, Juan Miguel; Colina Brito, Mónica Alejandra; Orpella García, Alberto; Alcubilla González, Ramón
2011Fast time-to-market with via-configurable transistor array regular fabric: A delay-locked loop design case studyGonzález Colás, Antonio María; Pons Solé, Marc; Barajas Ojeda, Enrique; Mateo Peña, Diego; López González, Juan Miguel; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio; Abella Ferrer, Jaume; Vera Rivera, Francisco Javier
jul-2013Numerical simulations of rear point-contacted solar cells pn 2.2 Wcm p-type c-Si substratesLópez González, Juan Miguel; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón
set-2009Study of emitter width effects on beta(F), f(T) and f(max) of 200 GHz SiGe HBTs by DD, HD and EB device simulationLópez González, Juan Miguel; Schröter, Michael
nov-2009Study of emitter width effects on BF, fT and fmax of 200 GHz SiGe HBTs by DD, HD and EB device simulationSchröter, Michael; López González, Juan Miguel
Mostrant resultats 1 a 7 de 7

 

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