3D simulations of back-contact back-junction c-Si(P) solar cells with doped point contacts
Document typeConference report
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The back-contact back-junction BC-BJ solar cell concept is a promising photovoltaic structure for both laboratory and industrial c-Si solar cells. High efficiency devices based on this concept have been reported in the past using either diffused regions or applying the heterojunction with intrinsic thin layer HIT concept to perform both base and emitter contacts. In this work we use 3D numerical simulations to study the impact of technological parameters on device performance of c-Si(p) BC-BJ solar cells with point-like doped contacts. Numerical simulations allow us to optimize rear contact geometry as a trade-off between recombination and base resistive losses, leading to photovoltaic efficiencies higher than 18.3% and up to 22.3% on 2.2 cm FZ substrates depending on the back contact pattern and the passivation quality of base contacts.
CitationCarrió, D. [et al.]. 3D simulations of back-contact back-junction c-Si(P) solar cells with doped point contacts. A: European Photovoltaic Solar Energy Conference and Exhibition. "Proceedings EU PSVSEC 2013, 28th European Photovoltaic Solar Energy Conference and Exhibition, Parc des Expositions Paris Nord Villepinte, Paris, France, Conference 30 Sep - 04 Oct 2013, Exhibition 01 Oct - 03 Oct 2013". Paris Nord Villepinte: 2013, p. 1607-1610.
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