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This paper presents an analytical model for high-frequency noise of high-speed SiGe
heterojunction bipolar transistors (HBTs). The model allows circuit level noise parameters to
be obtained: the minimum noise figure, the noise resistance and the optimum admittance for
different bias and frequencies up to 64 GHz, including the quasi-saturation effect. The noise
parameters are determined directly from y-parameters. The analytical model is verified
through comparison with TCAD simulation results of the noise parameters using the field
impedance method as well as with measured data. The paper also reviews for 200 GHz SiGe
HBTs the latest y-parameters-based analytical noise models. Their bias and frequency
dependence is calculated and compared with device simulation.
CitationLopez, J. Analytical modelling of 200 GHz SiGe HBT high-frequency noise parameters. "Semiconductor science and technology", 01 Octubre 2010.
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