3D TCAD modeling of laser processed c-Si solar cells
Document typeConference report
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Rights accessRestricted access - publisher's policy
This paper presents an 3D TCAD model of crystalline Silicon (c-Si) solar cells. Physical parameters used in the model are discussed. Simulation results are compared to experimental current-voltage curves and solar cell figures of merit namely open-circuit voltage, short-circuit current density, fill factor, and conversion efficiency, allowing us to determine an optimum design for these devices. Particularly, the model is applied to conventional p-type c-Si solar cells with rear contacts based on Laser-Firing technique and to Doped by Laser (DopLa) crystalline Silicon solar cells.
CitationLopez-Gonzalez, Juan M., Martin, I., Ortega, P., Orpella, A., Alcubilla, R. 3D TCAD modeling of laser processed c-Si solar cells. A: Spanish Conference on Electron Devices. "2015 10th Spanish Conference on Electron Devices (CDE 2015): Aranjuez-Madrid, Spain: 11-13 February 2015". Madrid: Institute of Electrical and Electronics Engineers (IEEE), 2015, p. 7087448-1-7087448-4.
|3D TCAD Modeling of Lase.pdf||486.7Kb||Restricted access|