DopLaCell: a new c-Si solar cell based on laser processing of dielectric films
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10.4229/28thEUPVSEC2013-2BV.2.30
Inclou dades d'ús des de 2022
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hdl:2117/21792
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Data publicació2013
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Abstract
In this paper we introduce a new crystalline silicon (c-Si) solar cell fabrication technology based on the
laser processing of dielectric films to create all the highly-doped regions. We call it DopLaCell (Doped by Laser Cell)
structure. The resulting fabrication process can be simplified to just four steps: wafer cleaning, film depositions, laser
processing and metallization. We used phosphorus-doped silicon carbide stacks (SiCx(n)) and aluminium oxide/silicon
carbide (Al2O3/SiCx) stacks for the creation of n+ and p+ regions respectively. As a proof of concept, 1x1 cm2 solar cells
were fabricated on 0.45 Wcm p-type substrates with promising results. The main feature of DopLaCell structure is the
location of the emitter at the rear surface consisting of a point-like laser processed n+ regions combined with an induced
inversion layer in between based on the fixed charge density of the SiCx(n) stacks. Solar cells with distance between rear
emitter regions or pitch ranging from 200 to 350 μm are characterized resulting in a strong decrease of Fill Factor (FF)
from 75.4 to 59.7 %. Suns-Voc measurements show excellent pseudo-FF (p-FF) values beyond 81% in all devices
demonstrating the high quality of laser doping process and the actual limitation of FF by ohmic losses. Device modelling
through 3D simulations demonstrates that these ohmic losses are related to the high sheet resistance of the inversion layer
induced in-between n+ regions. We conclude that there is room for improvement to fully develop the potential of this new
structure, particularly for low resistivity n-type substrates where the high fixed charge densities of Al2O3 can help to
improve FF.
CitacióMartin, I. [et al.]. DopLaCell: a new c-Si solar cell based on laser processing of dielectric films. A: European Photovoltaic Solar Energy Conference and Exhibition. "Proceedings EU PSVSEC 2013, 28th European Photovoltaic Solar Energy Conference and Exhibition, Parc des Expositions Paris Nord Villepinte, Paris, France, Conference 30 Sep - 04 Oct 2013, Exhibition 01 Oct - 03 Oct 2013". Paris Nord Villepinte: 2013, p. 1311-1315.
ISBN3-936338-33-7
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EU PVSEC 2013 2BV.2.30_paper.pdf | TEXT COMPLET | 134,4Kb | Accés restringit |