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A cmos-mems beol 2-axis lorentz-force magnetometer with device-level offset cancellation
dc.contributor.author | Sánchez Chiva, José María |
dc.contributor.author | Valle Fraga, Juan José |
dc.contributor.author | Fernández, Daniel |
dc.contributor.author | Madrenas Boadas, Jordi |
dc.contributor.other | Universitat Politècnica de Catalunya. Doctorat en Enginyeria Electrònica |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2021-03-03T10:23:20Z |
dc.date.available | 2021-03-03T10:23:20Z |
dc.date.issued | 2020-10-19 |
dc.identifier.citation | Sánchez-Chiva, J.M. [et al.]. A cmos-mems beol 2-axis lorentz-force magnetometer with device-level offset cancellation. "Sensors (Switzerland)", 19 Octubre 2020, vol. 20, núm. 20, p. 5899:1-5899:20. |
dc.identifier.issn | 14248220 |
dc.identifier.uri | http://hdl.handle.net/2117/340811 |
dc.description.abstract | Lorentz-force Microelectromechanical Systems (MEMS) magnetometers have been proposed as a replacement for magnetometers currently used in consumer electronics market. Being MEMS devices, they can be manufactured in the same die as accelerometers and gyroscopes, greatly reducing current solutions volume and costs. However, they still present low sensitivities and large offsets that hinder their performance. In this article, a 2-axis out-of-plane, lateral field sensing, CMOS-MEMS magnetometer designed using the Back-End-Of-Line (BEOL) metal and oxide layers of a standard CMOS (Complementary Metal–Oxide–Semiconductor) process is proposed. As a result, its integration in the same die area, side-by-side, not only with other MEMS devices, but with the readout electronics is possible. A shielding structure is proposed that cancels out the offset frequently reported in this kind of sensors. Full-wafer device characterization has been performed, which provides valuable information on device yield and performance. The proposed device has a minimum yield of 85.7% with a good uniformity of the resonance frequency fr = 56.8 kHz, sfr = 5.1 kHz and quality factor Q = 7.3, sQ = 1.6 at ambient pressure. Device sensitivity to magnetic field is 37.6 fA·µT -1 at P = 1130 Pa when driven with I = 1 mApp. |
dc.description.sponsorship | This research was supported in part under project RTI2018-099766-B-I00 by the Spanish Ministry of Science, Innovation and Universities, the State Research Agency (AEI), and the European Social Fund (ESF). |
dc.language.iso | eng |
dc.subject | Àrees temàtiques de la UPC::Matemàtiques i estadística::Matemàtica aplicada a les ciències |
dc.subject.lcsh | Electromagnetic theory |
dc.subject.other | MEMS |
dc.subject.other | magnetic sensor |
dc.subject.other | magnetometer |
dc.subject.other | Lorentz-force |
dc.subject.other | offset suppression |
dc.subject.other | micromachined Resonator |
dc.subject.other | micromechanical oscillator |
dc.title | A cmos-mems beol 2-axis lorentz-force magnetometer with device-level offset cancellation |
dc.type | Article |
dc.subject.lemac | Electromagnetisme |
dc.contributor.group | Universitat Politècnica de Catalunya. ISSET - Integrated Smart Sensors and Health Technologies |
dc.identifier.doi | 10.3390/s20205899 |
dc.description.peerreviewed | Peer Reviewed |
dc.subject.ams | Classificació AMS::78 Optics, electromagnetic theory::78M Basic methods |
dc.relation.publisherversion | https://www.mdpi.com/1424-8220/20/20/5899 |
dc.rights.access | Open Access |
local.identifier.drac | 30424487 |
dc.description.version | Postprint (published version) |
dc.relation.projectid | info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/RTI2018-099766-B-I00/ES/INTEGRACION DE CMOS-MEMS AVANZADOS PARA SISTEMAS DE NUEVA GENERACION A ESCALA MILIMETRICA/ |
local.citation.author | Sánchez-Chiva, J.M.; Valle, J.; Fernández, D.; Madrenas, J. |
local.citation.publicationName | Sensors (Switzerland) |
local.citation.volume | 20 |
local.citation.number | 20 |
local.citation.startingPage | 5899:1 |
local.citation.endingPage | 5899:20 |
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