Recent Submissions

  • Impact on the wave parameters estimation of a kinetic energy harvester embedded into a drifter 

    Carandell Widmer, Matias; Toma, Daniel; Pinto, José P.; Gasulla Forner, Manuel; Río Fernandez, Joaquín del (Institute of Electrical and Electronics Engineers (IEEE), 2020)
    Conference lecture
    Restricted access - publisher's policy
    The effect of a Kinetic Energy Harvester (KEH) on the wave parameters estimation at a WAVY Ocean (WO) drifter is being studied. An algorithm has been developed to calculate the wave parameters from the Inertial Measuring ...
  • Alternative memristor-based interconnect topologies for fast adaptive synchronization of chaotic circuits 

    Escudero López, Manuel; Vourkas, Ioannis; Rubio Sola, Jose Antonio (2020-09)
    Article
    Restricted access - publisher's policy
    Resistive switching devices (memristors) constitute an emerging device technology promising for a vari- ety of applications that are currently being studied. In this context, the use of memristors as coupling el- ements ...
  • Noise-induced Performance Enhancement of Variability-aware Memristor Networks 

    Ntinas, Vasileios; Fyrigos, Iosif; Sirakoulis, Georgios; Rubio Sola, Jose Antonio; Martin Martinez, Javier; Rodriguez, Rosana; Nafría Maqueda, Montserrat (2019)
    Conference report
    Restricted access - publisher's policy
    Memristor networks are capable of low-power, massive parallel processing and information storage. Moreover, they have widely used for a vast number of intelligent data analysis applications targeting mobile edge devices ...
  • Plasma modified silicon nitride resistive switching memories 

    Karakolis, Panagiotis; Normand, Pascal; Dimitrakis, Panagiotis; Sygelou, L; Ntinas, Vasileios; Fyrigos, Iosif; Karafydillis, Ioannis; Sirakoulis, Georgios (2019)
    Conference report
    Restricted access - publisher's policy
    In this article we present RRAM single-cells based on MIS devices utilizing LPCVD silicon nitride thin layer as resistive switching material. The thin SiN layer was modified by plasma in order to improve the switching ...
  • Experimental investigation of memristance enhancement 

    Ntinas, Vasileios; Rubio Sola, Jose Antonio; Sirakoulis, Georgios; Rodriguez, Rosana; Nafría Maqueda, Montserrat (2019)
    Conference report
    Restricted access - publisher's policy
    Memristor devices are two-terminal nanoscale circuit elements that exhibit nonvolatile information storing and can be manufactured in ultra-dense arrays with low-power operation. Although, theoretically, memristors are ...
  • Effect of bending on a textile UHF-RFID tag antenna 

    El Bakkali, Mohamed; Martínez Estrada, Marc; Fernández García, Raúl; Gil Galí, Ignacio; El Mrabet, Otman
    Conference report
    Restricted access - publisher's policy
    In this paper, a textile UHF-RFID tag antenna at 915 MHz based on a T-match dipole loaded with circular patch on a felt fabric substrate is presented and discussed. In addition, the bending impact on the read range is ...
  • Future and emergent materials and devices for resistive switching 

    Karakolis, Panagiotis; Normand, Pascal; Dimitrakis, Panagiotis; Ntinas, Vasileios; Fyrigos, Iosif; Karafydillis, Ioannis; Sirakoulis, Georgios (2018)
    Conference report
    Restricted access - publisher's policy
    During the last years, Resistive Random-Access Memories (ReRAMs or RRAMs) stimulated growing attention as promising non-volatile (NV) candidate memories to surpass existing storage devices while exhibiting excellent ...
  • 5GHz CMOS all-pass filter-based true time delay cell 

    Aghazadeh Dafsari, Seyed Rasoul; Martínez García, Herminio; Saberkari, Alireza (Multidisciplinary Digital Publishing Institute (MDPI), 2020)
    Part of book or chapter of book
    Open Access
    Analog CMOS time-delay cells realized by passive components, e.g., lumped LC delay lines, are inefficient in terms of area for multi-GHz frequencies. All-pass filters considered as active circuits can, therefore, be the ...
  • Probabilistic resistive switching device modeling based on Markov jump processes 

    Ntinas, Vasileios; Rubio Sola, Jose Antonio; Sirakoulis, Georgios (Institute of Electrical and Electronics Engineers (IEEE), 2020-12-02)
    Article
    Open Access
    In this work, a versatile mathematical framework for multi-state probabilistic modeling of Resistive Switching (RS) devices is proposed for the first time. The mathematical formulation of memristor and Markov jump processes ...
  • Power-efficient noise-Induced reduction of ReRAM cell’s temporal variability effects 

    Ntinas, Vasileios; Rubio Sola, Jose Antonio; Sirakoulis, Georgios; Salvador, Emili; Pedro, Marta; Crespo-Yepes, A.; Martin Martinez, Javier; Rodríguez Martínez, Rosana; Nafria, Montserrat (2021-04)
    Article
    Open Access
    Resistive Random Access Memory (ReRAM) is apromising novel memory technology for non-volatile storing, with low-power operation and ultra-high area density. However, ReRAM memories still face issues through commerciali ...
  • A distributed control for accurate active-power sharing in islanded microgrids subject to clock drifts 

    Alfaro Aragón, Carlos Arturo; Castilla Fernández, Miguel; Camacho Santiago, Antonio; Martí Colom, Pau; Velasco García, Manel (2021-01-28)
    Article
    Open Access
    Inverters-based islanded microgrids are operated by local digital signal processors, driven by their own local clocks. These local clocks have drifts affecting the clock signals which are used to control the inverters in ...
  • Comprehensive analysis of hexagonal sigma-delta modulations for three-phase high-frequency VSC based on wide-bandgap semiconductors 

    Lumbreras Carrasco, David; Zaragoza Bertomeu, Jordi; Berbel Artal, Néstor; Mon González, Juan; Galvez Moreno, Eduardo; Collado Escolano, Alfonso (Institute of Electrical and Electronics Engineers (IEEE), 2021-06)
    Article
    Open Access
    The efficiency of wide-bandgap (WBG) power converters can be greatly improved using high-frequency modulation techniques. This article proposes using single-loop and double-loop hexagonal sigma-delta (H-S¿ and DH-S¿, ...

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