Show simple item record

dc.contributorAragonès Cervera, Xavier
dc.contributorKalkur, Thottam
dc.contributor.authorCalleja Luque, Mònica
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2020-10-29T10:54:23Z
dc.date.available2020-10-29T10:54:23Z
dc.date.issued2020-06
dc.identifier.urihttp://hdl.handle.net/2117/330950
dc.description(Provisional Description) Student will work in the Microelectronics Research Laboratory and perform experiments on the design and fabrication of microelectronic devices. Also, perform device characterization and device modeling.
dc.description.abstractThe constant demand for higher speed and larger bandwidths together with the massive development of personal communications systems, navigation, satellite communications as well as personal computer and data processing systems have driven fabrication technology to its limits. This, in turn, necessitates the development of novel functional materials for the fabrication of devices with superior performance and higher capacity at reduced manufacturing costs. Researches have been paying attention to ferroelectric materials, such as barium strontium titanate (BST), because of their eld-induced piezoelectric property. They are able to produce a voltage that is proportional to whatever mechanical pressure is applied. This property gives these types of ferroelectric materials the ability to be switchable and tunable in the presence of an electric eld. Sensors, non-volatile memory and DRAMs and pyroelectric detectors are few of many applications where these ferroelectic materials are used thanks to these features. Ferroelectric bulk acoustic wave (BAW) resonators and lters that are switchable and tunable promise to reduce the size and complexity of many devices. This dissertation presents the design, fabrication and experimental evaluation of thin lm bulk acoustic wave (BAW) resonators and the characterization of some steps in between. The BAW resonators in this work were fabricated on silicon substrates as solidly mounted resonator (SMR) structure with number of periodic layers of silicon dioxide and tantalum oxide as a Bragg re ector in order to acoustically isolate the resonator from the damping e ect of the substrate, enhancing the quality factor. 1
dc.language.isoeng
dc.publisherUniversitat Politècnica de Catalunya
dc.rightsS'autoritza la difusió de l'obra mitjançant la llicència Creative Commons o similar 'Reconeixement-NoComercial- SenseObraDerivada'
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Física
dc.subject.lcshMicrowave circuits
dc.subject.lcshMicroelectronics
dc.subject.lcshElectronic circuit design
dc.subject.lcshElectronic measurements
dc.subject.othermicrostrip
dc.subject.othermicroelectronics
dc.subject.otherdielectric
dc.subject.othermaterials
dc.subject.othersilicon
dc.subject.otherresonator
dc.subject.otherthin film
dc.subject.otheracoustic
dc.subject.otherSMR
dc.subject.otherBAW
dc.subject.otherMicroelectrónica
dc.titleDesign, fabrication and characterization of Bulk Acoustic Wave Resonators
dc.title.alternativeDiseño, fabricación y caracterización de resonadores acústicos de onda.
dc.title.alternativeDesign, fabrication and experimental characterization of microelectronic devices (Provisional Title)
dc.typeBachelor thesis
dc.subject.lemacCircuits de microones
dc.subject.lemacMicroelectrònica
dc.subject.lemacCircuits electrònics -- Disseny i construcció
dc.subject.lemacElectrònica -- Mesuraments
dc.identifier.slugETSETB-230.152320
dc.rights.accessOpen Access
dc.date.updated2020-07-14T05:50:28Z
dc.audience.educationlevelGrau
dc.audience.mediatorEscola Tècnica Superior d'Enginyeria de Telecomunicació de Barcelona
dc.audience.degreeGRAU EN ENGINYERIA FÍSICA (Pla 2011)
dc.contributor.covenanteeUniversity of Colorado Colorado Springs


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record