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dc.contributor.authorCuadras Tomàs, Àngel
dc.contributor.authorOvejas Benedicto, Victòria Júlia
dc.contributor.authorQuílez Figuerola, Marcos
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2014-03-12T11:38:10Z
dc.date.created2013
dc.date.issued2013
dc.identifier.citationCuadras, A.; Ovejas, V.; Quilez, M. Entropy as a wear out indicator: The resistor example. A: International Multi-Conference on Systems, Signals and Devices. "Proceedings of the 10th International Multi-Conference on Systems, Signals and Devices -SSD 2013". Hammamet: 2013, p. 1-5.
dc.identifier.isbn978-146736458-4
dc.identifier.urihttp://hdl.handle.net/2117/22002
dc.description.abstractIn this contribution we aim at proposing entropy measurements in resistive elements to characterize the induced damage due to current and Joule effect dissipation. 0.25 W off the shelf resistors are biased with constant voltage and pulsed voltage signals, leading to power dissipation in the range of 2 W - 5 W, to accelerate resistor failure. Entropy is inferred from injected power with respect to temperature evolution. Results show an entropy increase as a function of time, thus being possible to define threshold entropy prior to resistor failure. Entropy generation rate also shows a sudden increase in strongly damaged resistors.
dc.format.extent5 p.
dc.language.isoeng
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica
dc.subject.otherdamage Entropy Joule effect reliability resistor
dc.titleEntropy as a wear out indicator: The resistor example
dc.typeConference report
dc.contributor.groupUniversitat Politècnica de Catalunya. GRUP ISI - Grup d'Instrumentació, Sensors i Interfícies
dc.identifier.doi10.1109/SSD.2013.6564142
dc.relation.publisherversionhttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6564142&tag=1
dc.rights.accessRestricted access - publisher's policy
local.identifier.drac12827359
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
local.citation.authorCuadras, A.; Ovejas, V.; Quilez, M.
local.citation.contributorInternational Multi-Conference on Systems, Signals and Devices
local.citation.pubplaceHammamet
local.citation.publicationNameProceedings of the 10th International Multi-Conference on Systems, Signals and Devices -SSD 2013
local.citation.startingPage1
local.citation.endingPage5


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