Departaments

Subcomunitats

Enviaments recents

  • Analytical modelling of bjt neurtral base region under variable injection conditions 

    Bardés Llorensí, Daniel; Alcubilla González, Ramón (1997-08)
    Article
    Accés restringit per política de l'editorial
    We present a set of closed form analytical solutions of the transport equation in the base of bipolar transistors. The presented 1D solutions hold for variable injection conditions, arbitrary doping profiles and arbitrary ...

  • Electrical properties of PECVD amorphous silicon-carbon alloys from amorphous-crystalline heterojunctions 

    Marsal Amenós, Félix; Pallarés Viña, Miguel Juan; Correig Blanchar, Francesc Xavier; Domínguez Pumar, Manuel; Bardés Llorensí, Daniel; Calderer Cardona, Josep; Alcubilla González, Ramón (1997-08)
    Article
    Accés restringit per política de l'editorial
    Heterojunction diodes fabricated by plasma enhanced chemical vapour deposition of n-type amorphous silicon carbide on p-type crystalline silicon are analysed by measuring their current-voltage characteristics. Two carrier ...

  • Distribution of recombination currents in the space charge of heterostructure bipolar devices 

    Pallares, J; Marsal, L F; Correig, X; Calderer Cardona, Josep; Alcubilla González, Ramón (1998-01)
    Article
    Accés obert
    This paper addresses the problem of the space charge region Shockley-Read-Hall (SRH) recombination currents in heterojunctions with one noncrystalline side. A formulation which generalizes previous works is discussed. The ...

  • Analysis of conduction mechanisms in annealed n-Si1-xCx:H/p-crystalline Si heterojunction diodes for different doping concentrations 

    Marsal, L F; Pallares, J; Correig, X; Orpella García, Alberto; Bardés Llorensí, Daniel; Alcubilla González, Ramón (American Institute of Physics (AIP), 1999-01)
    Article
    Accés restringit per política de l'editorial
    We fabricated and characterized annealed n-type amorphous Si1-xCx on p-type crystalline silicon heterojunction diodes with three different base doping concentrations: NA~1016,¿1018, and 1020¿cm-3. The conduction mechanisms ...

  • In-situ doped amorphous Si0.8C0.2 emitter bipolar transistors 

    Orpella García, Alberto; Bardés Llorensí, Daniel; Alcubilla González, Ramón; Marsal, L F; Pallarès Marzal, Josep (1999-11)
    Article
    Accés obert
    The fabrication and characterization of in situ-doped amorphous Si/sub 0.8/C/sub 0.2/ emitter transistors are presented. Emitter Gummel numbers exceeding 10/sup 14/ s/cm/sup 4/ are reported for the first time in this type ...

  • Microcrystalline silicon thin film transistors obtained by hot-wire CVD 

    Puigdollers i González, Joaquim; Dosev, D; Orpella García, Alberto; Voz Sánchez, Cristóbal; Peiro, D; Bertomeu Balaguero, Joan; Marsal, L F; Pallarés, J; Andreu Batallé, Jordi; Alcubilla González, Ramón (1999-12)
    Article
    Accés restringit per política de l'editorial
    Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques ...

  • Reformulated acyclic partitioning for rail-rail containers transshipment 

    Albareda Sambola, Maria; Marín Pérez, Alfredo; Rodríguez Chía, Antonio Manuel (Elsevier, 2019-02-14)
    Article
    Accés restringit per política de l'editorial
    Many rail terminals have loading areas that are properly equipped to move containers between trains. With the growing throughput of these terminals all the trains involved in a sequence of such movements may not ¿t in the ...

  • All-solid-state VUV frequency comb at 160 nm using high-harmonic generation in nonlinear femtosecond enhancement cavity 

    Seres, Jozsef; Seres, Enikoe; Serrat Jurado, Carles; Young, E. C.; Speck, J.S.; Schumm, T. (2019-02-21)
    Article
    Accés obert
    We realized a solid-state-based vacuum ultraviolet frequency comb by harmonics generation in an external enhancement cavity. Optical conversions were so far reported by only using gaseous media. We present a theory that ...

  • Alternative conducted emission measurements on mains without LISNs 

    Pous Solà, Marc; Silva Martínez, Fernando (2015-12-01)
    Article
    Accés obert
    Conducted emission tests are always performed by the use of LISNs in laboratories in accordance with CISPR22, CISPR11 and other similar standards. However, it is not always possible to use LISNs because of some limitations. ...

  • Comparison of video-based methods for respiration rhythm measurement 

    Mateu Mateus, Marc; Guede Fernández, Federico; Ferrer Mileo, Víctor; García González, Miguel Ángel; Ramos Castro, Juan José; Fernández Chimeno, Mireya (2019-05-01)
    Article
    Accés restringit per política de l'editorial
    The aim of this work is to characterize the di erences in the respiratory rhythm obtained through three video based methods by comparing the obtained respiratory signals with the one obtained with the gold standard method ...

  • Decomposition spaces and restriction species 

    Gálvez Carrillo, Maria Immaculada; Kock, Joachim; Tonks, Andrew (Oxford University Press, 2018-09-12)
    Article
    Accés restringit per política de l'editorial
    We show that Schmitt’s restriction species (such as graphs, matroids, posets, etc.) naturally induce decomposition spaces (a.k.a. unital 2-Segal spaces), and that their associated coalgebras are an instance of the general ...

  • Exponential decay in one-dimensional type III thermoelasticity with voids 

    Miranville, Alain; Quintanilla de Latorre, Ramón (Elsevier, 2019-08)
    Article
    Accés restringit per política de l'editorial
    In this paper we consider the one-dimensional type III thermoelastic theory with voids. We prove that generically we have exponential stability of the solutions. This is a striking fact if one compares it with the behavior ...

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