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dc.contributor.authorSaberkari, Alireza
dc.contributor.authorAlarcón Cot, Eduardo José
dc.contributor.authorShokouhi, Shahriar B.
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2013-05-17T12:16:56Z
dc.date.created2012
dc.date.issued2012
dc.identifier.citationSaberkari, A.; Alarcon, E.; Shokouhi, S. CMOS fast transient low-dropout regulator. A: Iranian Conference Electrical Engineering. "20th Iranian Conference on Electrical Engineering (ICEE) 2012: 15-17 May 2012: Tehran, Iran". Tehran: Institute of Electrical and Electronics Engineers (IEEE), 2012, p. 105-108.
dc.identifier.isbn978-1-4673-1149-6
dc.identifier.urihttp://hdl.handle.net/2117/19332
dc.description.abstractIn this paper a fast transient response CFA-based low-dropout regulator (LDO) is introduced. The circuit is stable for 0-100mA output load current and a 1μF output capacitor without any internal compensation. The CFA consists of a voltage follower with output local current-current feedback based on a level-shifted flipped voltage follower (LSFVF) which is instrumental to achieve high regulation and fast transient response. The inverting output buffer stage of the CFA together with current-mirror-based driving of the pass transistor results in high PSRR. Full transistor-level simulation results for an AMS 0.35μm CMOS process design reveal that the proposed LDO dissipates 58μA quiescent current at no-load condition and in worst case conditions has a current efficiency of 99.8%. For a 1μF output capacitor, the maximum output voltage variation to a 0-100mA load transient with rise and fall time of 10 and 100ns is only 2.5mV, and the PSRR is smaller than -58dB over the entire load current range.
dc.format.extent4 p.
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
dc.subject.lcshIntegrated circuits
dc.subject.otherfast transient
dc.subject.otherlevel-shifted flipped voltage follower
dc.subject.otherlow-dropout
dc.titleCMOS fast transient low-dropout regulator
dc.typeConference report
dc.subject.lemacCircuits integrats
dc.contributor.groupUniversitat Politècnica de Catalunya. EPIC - Energy Processing and Integrated Circuits
dc.identifier.doi10.1109/IranianCEE.2012.6292333
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6292333
dc.rights.accessRestricted access - publisher's policy
local.identifier.drac11056259
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
local.citation.authorSaberkari, A.; Alarcon, E.; Shokouhi, S.
local.citation.contributorIranian Conference Electrical Engineering
local.citation.pubplaceTehran
local.citation.publicationName20th Iranian Conference on Electrical Engineering (ICEE) 2012: 15-17 May 2012: Tehran, Iran
local.citation.startingPage105
local.citation.endingPage108


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