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CMOS fast transient low-dropout regulator
dc.contributor.author | Saberkari, Alireza |
dc.contributor.author | Alarcón Cot, Eduardo José |
dc.contributor.author | Shokouhi, Shahriar B. |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2013-05-17T12:16:56Z |
dc.date.created | 2012 |
dc.date.issued | 2012 |
dc.identifier.citation | Saberkari, A.; Alarcon, E.; Shokouhi, S. CMOS fast transient low-dropout regulator. A: Iranian Conference Electrical Engineering. "20th Iranian Conference on Electrical Engineering (ICEE) 2012: 15-17 May 2012: Tehran, Iran". Tehran: Institute of Electrical and Electronics Engineers (IEEE), 2012, p. 105-108. |
dc.identifier.isbn | 978-1-4673-1149-6 |
dc.identifier.uri | http://hdl.handle.net/2117/19332 |
dc.description.abstract | In this paper a fast transient response CFA-based low-dropout regulator (LDO) is introduced. The circuit is stable for 0-100mA output load current and a 1μF output capacitor without any internal compensation. The CFA consists of a voltage follower with output local current-current feedback based on a level-shifted flipped voltage follower (LSFVF) which is instrumental to achieve high regulation and fast transient response. The inverting output buffer stage of the CFA together with current-mirror-based driving of the pass transistor results in high PSRR. Full transistor-level simulation results for an AMS 0.35μm CMOS process design reveal that the proposed LDO dissipates 58μA quiescent current at no-load condition and in worst case conditions has a current efficiency of 99.8%. For a 1μF output capacitor, the maximum output voltage variation to a 0-100mA load transient with rise and fall time of 10 and 100ns is only 2.5mV, and the PSRR is smaller than -58dB over the entire load current range. |
dc.format.extent | 4 p. |
dc.language.iso | eng |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 Spain |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica |
dc.subject.lcsh | Integrated circuits |
dc.subject.other | fast transient |
dc.subject.other | level-shifted flipped voltage follower |
dc.subject.other | low-dropout |
dc.title | CMOS fast transient low-dropout regulator |
dc.type | Conference report |
dc.subject.lemac | Circuits integrats |
dc.contributor.group | Universitat Politècnica de Catalunya. EPIC - Energy Processing and Integrated Circuits |
dc.identifier.doi | 10.1109/IranianCEE.2012.6292333 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6292333 |
dc.rights.access | Restricted access - publisher's policy |
local.identifier.drac | 11056259 |
dc.description.version | Postprint (published version) |
dc.date.lift | 10000-01-01 |
local.citation.author | Saberkari, A.; Alarcon, E.; Shokouhi, S. |
local.citation.contributor | Iranian Conference Electrical Engineering |
local.citation.pubplace | Tehran |
local.citation.publicationName | 20th Iranian Conference on Electrical Engineering (ICEE) 2012: 15-17 May 2012: Tehran, Iran |
local.citation.startingPage | 105 |
local.citation.endingPage | 108 |