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Low-frequency noise measurements in silicon power MOSFETs as a tool to experimentally investigate the defectiveness of the gate oxide

dc.contributor.authorMagnone, Paolo
dc.contributor.authorAndrea Traverso, Pier
dc.contributor.authorBarletta, Giacomo
dc.contributor.authorFiegna, Claudio
dc.date.accessioned2014-10-09T14:21:54Z
dc.date.available2014-10-09T14:21:54Z
dc.date.issued2013
dc.identifier.citationMagnone, Paolo [et al.]. Low-frequency noise measurements in silicon power MOSFETs as a tool to experimentally investigate the defectiveness of the gate oxide. "Instrumentation viewpoint", 2013, núm. 14, p. 47.
dc.identifier.issn1886-4864
dc.identifier.urihttp://hdl.handle.net/2099/15290
dc.format.extent1
dc.language.isoeng
dc.publisherSARTI
dc.titleLow-frequency noise measurements in silicon power MOSFETs as a tool to experimentally investigate the defectiveness of the gate oxide
dc.typeArticle
dc.description.peerreviewedPeer Reviewed
dc.rights.accessOpen Access
local.citation.authorMagnone, Paolo; Andrea Traverso, Pier; Barletta, Giacomo; Fiegna, Claudio
local.citation.publicationNameInstrumentation viewpoint
local.citation.number14
local.citation.startingPage47
local.citation.endingPage47


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