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Electrothermally actuated RF MEMS switches suspended on a low-resistivity substrate
dc.contributor.author | Girbau Sala, David |
dc.contributor.author | Pradell i Cara, Lluís |
dc.contributor.author | Lázaro Guillén, Antoni |
dc.contributor.author | Nebot Serra, Àlvar |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions |
dc.date.accessioned | 2008-03-12T11:09:53Z |
dc.date.available | 2008-03-12T11:09:53Z |
dc.date.created | 2007-10 |
dc.date.issued | 2007-10-31 |
dc.identifier.citation | Girbau, D.; Pradell, L.; Lazaro, A.; Nebot, A. Electrothermally actuated RF MEMS switches suspended on a low-resistivity substrate. Journal of microelectromechanical systems, 2007, vol. 16, núm. 5, p. 1061-1070. |
dc.identifier.issn | 1057-7157 |
dc.identifier.uri | http://hdl.handle.net/2117/1798 |
dc.description.abstract | This paper presents an electrothermally actuated lateral resistive-contact switch for application to low-gigahertz-band communication systems. It was manufactured on a standard low-resistivity substrate, and its RF performance was improved by suspending the structures 25 μm from the substrate, which is a strategy for future integration with active devices in the system-on-chip concept. Measured insertion losses are−0.26 dB at 1 GHz and −0.65 dB at 6 GHz, return losses are −29 dB at 1 GHz and −25 dB at 6 GHz, and isolations are −52 dB at 1 GHz and −26 dB at 6 GHz. The device is driven by a metal electrothermal actuator, which achieves large displacements and contact forces at much lower temperatures than traditional polysilicon electrothermal actuators. The RF power handling characteristics are also addressed and measured. |
dc.format.extent | 10 |
dc.language.iso | eng |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica |
dc.subject.lcsh | Microelectromechanical systems |
dc.subject.other | microwave switches |
dc.subject.other | microswitches |
dc.subject.other | loss -0.26 dB |
dc.subject.other | loss -0.65 dB |
dc.subject.other | loss -29 dB |
dc.subject.other | loss -25 dB |
dc.subject.other | frequency 1 GHz |
dc.subject.other | frequency 6 GHz |
dc.subject.other | electrothermally actuated RF MEMS switches |
dc.subject.other | low-resistivity substrate |
dc.subject.other | electrothermally actuated lateral resistive-contact switch |
dc.subject.other | low-gigahertz-band communication systems |
dc.subject.other | system-on-chip concept |
dc.subject.other | metal electrothermal actuator |
dc.subject.other | contact forces |
dc.subject.other | polysilicon electrothermal actuators |
dc.subject.other | RF power handling characteristics |
dc.subject.other | microelectromechanical systems switch |
dc.title | Electrothermally actuated RF MEMS switches suspended on a low-resistivity substrate |
dc.type | Article |
dc.subject.lemac | Sistemes microelectromecànics |
dc.contributor.group | Universitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones |
dc.description.peerreviewed | Peer Reviewed |
dc.rights.access | Open Access |
local.personalitzacitacio | true |
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