Exploració per tema "III–V semiconductor materials"

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    • Impact of finfet and III-V/Ge technology on logic and memory cell behavior 

      Amat Bertran, Esteve; Calomarde Palomino, Antonio; García Almudéver, Carmen; Aymerich Capdevila, Nivard; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (2013-11-20)
      Article
      Accés restringit per política de l'editorial
      In this work, we assess the performance of a ring oscillator and a DRAM cell when they are implemented with different technologies (planar CMOS, FinFET and III-V MOSFETs), and subjected to different reliability scenarios ...