• Improvement of crystalline silicon surface passivation by hidrogen plasma treatment 

      Martín García, Isidro; Vetter, Michael; Orpella García, Alberto; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Kharchenko, A.V.; Roca i Cabarrocas, Pere (American Institute of Physics, 2004-03-01)
      Article
      Accés restringit per política de l'editorial
      A completely dry low-temperature process has been developed to passivate 3.3 Ωcm p-type crystalline silicon surface with excellent results. Particularly, we have investigated the use of a hydrogen plasma treatment, just ...
    • Recombination rates in heterojunction silicon solar cells analyzed by impedance spectroscopy at forward bias and under 

      Mora-Seró, I; Luo, Y; Garcia Belmonte, G; Bisquert, J; Muñoz Cervantes, Delfina; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (2007-12)
      Article
      Accés restringit per política de l'editorial
      Impedance spectroscopy (at forward bias and under illumination) of solar cells comprised thin hydrogenated amorphous silicon (a-Si:H) films deposited on crystalline silicon (c-Si) wafers was analyzed in terms of ac equivalent ...