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A completely dry low-temperature process has been developed to passivate 3.3 Ωcm p-type
crystalline silicon surface with excellent results. Particularly, we have investigated the use of a
hydrogen plasma treatment, just before hydrogenated amorphous silicon carbide (a-SiCx:H)
deposition, without breaking the vacuum. We measured effective lifetime, Τ eff , through a
quasi-steady-state photoconductance technique. Experimental results show that hydrogen plasma
treatment improves surface passivation compared to classical HF dip. Seff values lower than 19
cm s -1 were achieved using a hydrogen plasma treatment and an a-SiCx:H film deposited at 300°C.
CitationMartín, I.; Vetter, M.; Orpella, A.; Voz, C.; Puigdollers, J.; Alcubilla, R.; Kharchenko, A.V.; Roca, P. Improvement of crystalline silicon surface passivation by hidrogen plasma treatment. A: Applied Physics Letters, 2004, v. 89, p. 1474-1746.
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