Exploració per autor "Puigdollers i González, Joaquim"Més informacióMés informació

Ara es mostren els items 84-103 de 147

    • Microcrystalline silicon thin film transistors obtained by hot-wire CVD 

      Puigdollers i González, Joaquim; Dosev, D; Orpella García, Alberto; Voz Sánchez, Cristóbal; Peiro, D; Bertomeu Balaguero, Joan; Marsal, L F; Pallarés, J; Andreu Batallé, Jordi; Alcubilla González, Ramón (1999-12)
      Article
      Accés restringit per política de l'editorial
      Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques ...

    • Mixed-phase composites derived from cobalt terephthalate as efficient battery-type electrodes for high-performance supercapattery 

      Manikandan, Ramu; Savariraj, A. Denninson; Nagaraju, Goli; Kale, A.M.; Puigdollers i González, Joaquim; Park, Hyejin; Kim, Hyun-Soo; Oh, Jae-Min; Raj, C. Justin (2023-09)
      Article
      Accés restringit per política de l'editorial
      Interfacial engineering of two-dimensional (2D) monometallic phosphides enables remarkable structural and electrochemical properties in energy storage devices. Herein, 2D nanosheets (NSs) of FeP2/Co2P were grown on Ni-foam ...

    • Model for the charge carrier collection in organic small-molecule solar cells 

      Galindo Lorente, Sergi; Ahmadpour Sayyar, Mehrad; Voz Sánchez, Cristóbal; Asensi, J.M.; Puigdollers i González, Joaquim; Alcubilla González, Ramón (2013)
      Comunicació de congrés
      Accés restringit per política de l'editorial

    • Molecular order of air-stable p-type organic thin-film transistors by tuning the extension of the pi-conjugated core: the cases of indolo[3,2-b]-carbazole and triindole semiconductors 

      Reig, Marta; Puigdollers i González, Joaquim; Velasco, Dolores (Royal Society of Chemistry, 2015-01-01)
      Article
      Accés obert
      Charge transport in organic devices depends strongly on the molecular order and morphology of the organic semiconductor thin films. In the design of new organic semiconductors, the selection of the appropriate core plays ...

    • Multicrystalline silicon thin-film solar cells based on vanadium oxide heterojunction and laser-doped contacts 

      Martín García, Isidro; López Rodríguez, Gema; Plentz, Jonathan; Jin, Chen; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Gawlik, Annet; Jia, Guobin; Andrä, Gudrun (2019-10)
      Article
      Accés obert
      Liquid phase crystallized (LPC) silicon thin films on glass substrates are a feasible alternative to conventional crystalline silicon (c-Si) wafers for solar cells. Due to substrate limitation, a low-temperature technology ...

    • N-type emitters passivation through antireflective phosphorus doped a-SiCxNy:H(n) stacks 

      Orpella García, Alberto; Blanqué, Servane; Roiati, V.; Martín García, Isidro; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (IEEE Press. Institute of Electrical and Electronics Engineers, 2009-02-11)
      Text en actes de congrés
      Accés obert
      This paper studies the passivation of industrially textured deep silicon emitters using amorphous silicon carbonitride layers in stack configuration, deposited by plasma enhanced chemical vapor deposition. With this ...

    • N-type PTCDI¿C13H27 thin-film transistors deposited at different substrate temperature 

      Puigdollers i González, Joaquim; Pirriera, Della M; Marsal Vinade, Albert; Orpella García, Alberto; Cheylan, Stephanie; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2009-10)
      Article
      Accés restringit per política de l'editorial
      N-type organic thin-film transistors based on N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide have been fabricated by thermal evaporation at different substrate temperatures. The best device was obtained at 120 ...

    • Near 5% DMSO is the best: a structural investigation of PEDOT: PSS thin films with strong emphasis on surface and interface for hybrid solar cell 

      Mahato, Somnath; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Mukhopadhyay, Mala; Mukherjee, Manabendra; Hazra, Satyajit (2019-09-10)
      Article
      Accés obert
      Effect of dimethyl sulfoxide (DMSO) doping on poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) thin films have been optimized for obtaining better hole transport layer in hybrid solar cell. The correlation ...

    • Optoelectronic devices based on evaporated pentacene films 

      Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Martín García, Isidro; Muñoz Cervantes, Delfina; Orpella García, Alberto; Vetter, Michael; Alcubilla González, Ramón (2005-01)
      Article
      Accés restringit per política de l'editorial
      Aluminium/pentacene Schottky diodes have been fabricated on glass substrates. An ohmic, transparent front contact was prepared by sputtering a highly conductive indium–tin-oxide layer. The pentacene layer was evaporated ...

    • Optoelectronic properties of CuPc thin films deposited at different substrate temperatures 

      Pirriera, Della M; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Stella, M; Bertomeu Balaguero, Joan; Alcubilla González, Ramón (Institute of Physics (IOP), 2009-07)
      Article
      Accés restringit per política de l'editorial
      Structural and optical characterization of copper phthalocyanine thin film thermally deposited at different substrate temperatures was the aim of this work. The morphology of the films shows strong dependence on temperature, ...

    • Origin of passivation in hole-selective transition metal oxides for crystalline silicon heterojunction solar cells 

      Gerling Sarabia, Luis Guillermo; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Puigdollers i González, Joaquim (2017-01-23)
      Article
      Accés obert
      Transition metal oxides (TMOs) have recently demonstrated to be a good alternative to boron/phosphorous doped layers in crystalline silicon heterojunction solar cells. In this work, the interface between n-type c-Si (n-Si) ...

    • Origin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor 

      Ros Costals, Eloi; Puigdollers i González, Joaquim; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal (Institute of Electrical and Electronics Engineers (IEEE), 2020-01-09)
      Article
      Accés obert
      In this work, we have fabricated and studied p-type picene thin-film transistors. Although the devices exhibited good electrical performance with high field-effect mobility (up to 1.3 cm 2 /V·s) and on/off ratios above 10 ...

    • Origin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor 

      Ros, Eloi; Puigdollers i González, Joaquim; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal (Institute of Electrical and Electronics Engineers (IEEE), 2019)
      Text en actes de congrés
      Accés obert
      In this work, we have fabricated and studied p-type picene thin-film transistors. Although the devices exhibited good electrical performance with high field-effect mobility (up to 1.3 cm2/V¿s) and on/off ratios above ...

    • PEDOT:PSS as an alternative hole selective contact for ITO-free hybrid crystalline silicon solar cell 

      Mahato, Somnath; Gerling Sarabia, Luis Guillermo; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Puigdollers i González, Joaquim (2016-05-12)
      Article
      Accés obert
      Organic-inorganic hybrid solar cells were fabricated by spin coating of conductive polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as hole selective contact upon textured n-type crystalline ...

    • Pentacene thin-film transistors on polymeric gate dielectric: device fabrication and electrical characterization 

      Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Martín García, Isidro; Orpella García, Alberto; Vetter, Michael; Alcubilla González, Ramón (2004-06)
      Article
      Accés restringit per política de l'editorial
      Pentacene thin-film transistors using polymethyl methacrylate as a gate dielectric have been fabricated. A bottom gate, inverted staggered structure was selected to study the influence of the dielectric on the device ...

    • Pentacene thin-film transistors with polymeric gate dielectric 

      Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella García, Alberto; Quidant, Romain; Martín García, Isidro; Vetter, Michael; Alcubilla González, Ramón (2004-06)
      Article
      Accés restringit per política de l'editorial
      Pentacene thin-film transistors have been obtained using polymethyl methacrylate as a gate dielectric. The maximum process temperature was 170 °C, which corresponds to the baking of the polymeric gate dielectric. These ...

    • Pentacene thin-films obtained by thermal evaporation in high vacuum 

      Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella García, Alberto; Martín García, Isidro; Vetter, Michael; Alcubilla González, Ramón (2003-03)
      Article
      Accés restringit per política de l'editorial
      Pentacene thin-films were obtained by thermal evaporation in high vacuum of a pure (98%) commercially available source. All the samples were grown at room temperature (25 °C) and high deposition rates (>20 Å/s) on Corning ...

    • Perovskite-based solar cell structures 

      Puigdollers i González, Joaquim; Silvestre Bergés, Santiago (2017-07-24)
      Report de recerca
      Accés obert
      Fabricación, caracterización y simulación de células de heterounión de silicio cristalino/silicio amorfo fabricadas a baja temperatura

    • Phosphorus-diffused silicon solar cell emitters with plasma enhanced chemical vapor deposited silicon carbide 

      Orpella García, Alberto; Vetter, Michael; Ferré Tomas, Rafel; Martín García, Isidro; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Alcubilla González, Ramón (2005-01)
      Article
      Accés restringit per política de l'editorial
      We propose the use of annealed phosphorus doped amorphous silicon carbide layers (a-SiC:H(n)) deposited by PECVD as emitters in solar cells and explore the effect of the annealing time on the emitter saturation current ...

    • Photodiodes based on fullerene semiconductor 

      Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Cheylan, Stephanie; Fonrodona, A; Stella, M; Andreu Batallé, Jordi; Alcubilla González, Ramón (2007-07)
      Article
      Accés restringit per política de l'editorial
      Fullerene thin films have been deposited by thermal evaporation on glass substrates at room temperature. A comprehensive optical characterization was performed, including low-level optical absorption measured by photothermal ...