A Reliable Low-area Low-power PUF-based Key Generator
Visualitza/Obre
Estadístiques de LA Referencia / Recolecta
Inclou dades d'ús des de 2022
Cita com:
hdl:2117/99214
Tipus de documentText en actes de congrés
Data publicació2016-11-14
Condicions d'accésAccés obert
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continguts d'aquesta obra estan subjectes a la llicència de Creative Commons
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Reconeixement-NoComercial-SenseObraDerivada 3.0 Espanya
Abstract
This paper reports the implementation of a lowarea low-power 128-bit PUF-based key generation module which exploits a novel Two-Stage IDentification (TSID) cell showing a higher noise immunity then a standard SRAM cell. In addition, the pre-selection technique introduced in [1] is applied. This results in a stable PUF response in spite of process and environmental variations thus requiring a low cost error correction algorithm in order to generate a reliable key. The adopted PUF cell array includes 1056 cells and shows a power consumption per bit of 4:2 W at 100MHz with an area per bit of 2:4 m2. In order to evaluate reliability and unpredictability of the generated key, extensive tests have been performed both on the raw PUF data and on the final key. The raw PUF data after pre-selection show a worst case intra-chip Hamming distance below 0:7%. After a total of more than 5 109 key reconstructions, no single fail has been detected.
Fitxers | Descripció | Mida | Format | Visualitza |
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FCTRU_2016_12_A_Reliable_Low.pdf | 1,311Mb | Visualitza/Obre |