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dc.contributor.authorFernández García, Raúl
dc.contributor.authorGil Galí, Ignacio
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2010-10-20T14:50:39Z
dc.date.available2010-10-20T14:50:39Z
dc.date.created2010
dc.date.issued2010
dc.identifier.citationFernandez, R.; Gil, I. An alternative characterization method of PFET sub-threshold slope under NBTI stress. A: European Solid State Device Research Conference. "ESSDERC". Sevilla: 2010.
dc.identifier.urihttp://hdl.handle.net/2117/9865
dc.description.abstractThe effects of negative bias temperature instability (NBTI) on the sub-threshold performance of a pFET have been investigated by means of experimental methods. Specifically, the sub-threshold slope under static and dynamic NBTI stress has been characterized for different NBTI stress conditions. In order to perform the characterization, a proposal based on an alternative measurement technique to obtain the sub-threshold slope is presented. Our first results indicate that similar sub-threshold slope is obtained in all stress conditions.
dc.format.extent1 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència
dc.subject.lcshElectromagnetic interference
dc.subject.lcshSwitching power supplies
dc.titleAn alternative characterization method of PFET sub-threshold slope under NBTI stress
dc.typeConference lecture
dc.subject.lemacInterferència electromàgnetica
dc.subject.lemacFonts d'alimentació
dc.contributor.groupUniversitat Politècnica de Catalunya. (TIEG) - Terrassa Industrial Electronics Group
dc.rights.accessOpen Access
local.identifier.drac2754958
dc.description.versionPostprint (published version)
local.citation.authorFernandez, R.; Gil, I.
local.citation.contributorEuropean Solid State Device Research Conference
local.citation.pubplaceSevilla
local.citation.publicationNameESSDERC


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