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dc.contributor.authorRana, Manish
dc.contributor.authorCanal Corretger, Ramon
dc.contributor.authorAmat Bertran, Esteve
dc.contributor.authorRubio Sola, Jose Antonio
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Arquitectura de Computadors
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2016-11-28T08:44:58Z
dc.date.available2016-11-28T08:44:58Z
dc.date.issued2016
dc.identifier.citationRana, M., Canal, R., Amat, Esteve, Rubio, A. Statistical analysis and comparison of 2T and 3T1D e-DRAM minimum energy operation. A: IEEE International Symposium on On-Line Testing and Robust System Design. "2016 IEEE 22nd International Symposium on On-Line Testing and Robust System Design (IOLTS): 4-6 July 2016, Hotel Eden Roc, Sant Feliu de Guixols Catalunya, Spain". Sant Feliu de Guixols, Barcelona: Institute of Electrical and Electronics Engineers (IEEE), 2016, p. 33-38.
dc.identifier.isbn978-1-5090-1506-1
dc.identifier.urihttp://hdl.handle.net/2117/97275
dc.description.abstractBio-medical wearable devices restricted to their small-capacity embedded-battery require energy-efficiency of the highest order. However, minimum-energy point (MEP) at sub-threshold voltages is unattainable with SRAM memory, which fails to hold below 0.3V because of its vanishing noise margins. This paper examines minimum-energy operation of 2T and 3T1D e-DRAM gain cells as an alternative to SRAM at 32nm technology node with different design points: up-sizing transistors, using high-Vth transistors, read/write wordline assists and temperature. First, the e-DRAM cells are evaluated without considering any process variations. The design-space is explored by creating a kriging meta-model to reduce the number of simulations. Finally, a full-factorial statistical analysis of e-DRAM cells is performed in presence of threshold voltage variations. The effect on mean MEP is also reported.
dc.format.extent6 p.
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.subjectÀrees temàtiques de la UPC::Informàtica::Arquitectura de computadors
dc.subject.lcshWearable technology -- Energy consumption
dc.subject.otherDRAM chips
dc.subject.otherEnergy conservation
dc.subject.otherSRAM chips
dc.subject.otherStatistical analysis
dc.subject.other2T1D e-DRAM
dc.subject.other3T1D e-DRAM
dc.subject.otherBiomedical wearable device
dc.subject.otherEmbedded-battery
dc.subject.otherEnergy-efficiency
dc.subject.otherMinimum-energy point
dc.subject.otherMEP
dc.subject.otherSubthreshold voltages
dc.subject.otherSRAM memory
dc.subject.otherNoise margins
dc.subject.otherMinimum energy operation
dc.subject.otherKriging metamodel
dc.subject.otherThreshold voltage variation
dc.subject.otherSize 32 nm
dc.titleStatistical analysis and comparison of 2T and 3T1D e-DRAM minimum energy operation
dc.typeConference report
dc.subject.lemacOrdinadors portables -- Consum d'energia
dc.contributor.groupUniversitat Politècnica de Catalunya. ARCO - Microarquitectura i Compiladors
dc.contributor.groupUniversitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.identifier.doi10.1109/IOLTS.2016.7604667
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://ieeexplore.ieee.org/document/7604667/
dc.rights.accessOpen Access
drac.iddocument19266923
dc.description.versionPostprint (author's final draft)
upcommons.citation.authorRana, M., Canal, R., Amat, Esteve, Rubio, A.
upcommons.citation.contributorIEEE International Symposium on On-Line Testing and Robust System Design
upcommons.citation.pubplaceSant Feliu de Guixols, Barcelona
upcommons.citation.publishedtrue
upcommons.citation.publicationName2016 IEEE 22nd International Symposium on On-Line Testing and Robust System Design (IOLTS): 4-6 July 2016, Hotel Eden Roc, Sant Feliu de Guixols Catalunya, Spain
upcommons.citation.startingPage33
upcommons.citation.endingPage38


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