Statistical analysis and comparison of 2T and 3T1D e-DRAM minimum energy operation
Document typeConference report
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Rights accessOpen Access
Bio-medical wearable devices restricted to their small-capacity embedded-battery require energy-efficiency of the highest order. However, minimum-energy point (MEP) at sub-threshold voltages is unattainable with SRAM memory, which fails to hold below 0.3V because of its vanishing noise margins. This paper examines minimum-energy operation of 2T and 3T1D e-DRAM gain cells as an alternative to SRAM at 32nm technology node with different design points: up-sizing transistors, using high-Vth transistors, read/write wordline assists and temperature. First, the e-DRAM cells are evaluated without considering any process variations. The design-space is explored by creating a kriging meta-model to reduce the number of simulations. Finally, a full-factorial statistical analysis of e-DRAM cells is performed in presence of threshold voltage variations. The effect on mean MEP is also reported.
CitationRana, M., Canal, R., Amat, Esteve, Rubio, A. Statistical analysis and comparison of 2T and 3T1D e-DRAM minimum energy operation. A: IEEE International Symposium on On-Line Testing and Robust System Design. "2016 IEEE 22nd International Symposium on On-Line Testing and Robust System Design (IOLTS): 4-6 July 2016, Hotel Eden Roc, Sant Feliu de Guixols Catalunya, Spain". Sant Feliu de Guixols, Barcelona: Institute of Electrical and Electronics Engineers (IEEE), 2016, p. 33-38.
- ARCO - Microarquitectura i Compiladors - Ponències/Comunicacions de congressos 
- HIPICS - High Performance Integrated Circuits and Systems - Ponències/Comunicacions de congressos 
- Departament d'Arquitectura de Computadors - Ponències/Comunicacions de congressos 
- Departament d'Enginyeria Electrònica - Ponències/Comunicacions de congressos