Intermediate amorphous silicon layer for crystalline silicon passivation with alumina
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10.4229/EUPVSEC20152015-2AV.3.3
Inclou dades d'ús des de 2022
Cita com:
hdl:2117/96485
Tipus de documentText en actes de congrés
Data publicació2015
EditorWIP Wirtschaft und Infrastruktur GmbH & Co. Planungs-KG
Condicions d'accésAccés restringit per política de l'editorial
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Reconeixement-NoComercial-SenseObraDerivada 3.0 Espanya
Abstract
The passivation of silicon surfaces is required to reach high-efficiency with most of modern solar cell device structures. It has been demonstrated that the deposition of charged dielectric layers such a-SiNx:H or Al2O3 on the silicon surface is an efficient passivation technology. In particular, the Al2O3 material is efficient to passivate p-type silicon surfaces, providing lifetimes greater than 1 ms for those with layers deposited by the ALD technique. Other deposition techniques, like magnetron sputtering, have not succeeded to provide this level of passivation, probably due to the damage caused on the silicon wafer surface by the high-energy deposition process. As a solution, we assume that an intrinsic a-Si:H very thin interlayer can serve both as a physical protection layer and as a source of
hydrogen atoms for surface chemical passivation. In this regard, we have developed a new approach based on the use of an intrinsic a-Si:H interlayer between the silicon wafer and the 50-nm thick passivation layer of amorphous Al2O3 deposited by sputtering. The results, obtained by QSSPC measurements, demonstrated effective lifetimes in the range of 1-2 ms for both n-type and p-type float zone silicon wafers covered with the a-Si:H/Al2O3 passivation layers and
after an annealing process at 350 °C.
CitacióGarcía, J., Caballero, Á., Asensi, J.M., Bertomeu, J., Andreu Batallé, Jordi, Gerling Sarabia, L., Ortega, P., Voz, C. Intermediate amorphous silicon layer for crystalline silicon passivation with alumina. A: European Photovoltaic Solar Energy Conference and Exhibition. "31st European Pholtovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2015): Hamburg, Germany: 14-18 September 2015". Hamburg: WIP Wirtschaft und Infrastruktur GmbH & Co. Planungs-KG, 2015, p. 719-723.
ISBN9781510820135
Versió de l'editorhttp://www.eupvsec-proceedings.com/proceedings?paper=35153
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