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dc.contributorGonzález Jiménez, José Luis
dc.contributor.authorLandauer, Gerhard Martin
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2014-07-09T11:45:57Z
dc.date.available2014-07-09T11:45:57Z
dc.date.issued2014-07-07
dc.identifier.citationLandauer, G.M. Opportunities for radio frequency nanoelectronic integrated circuits using carbon-based technologies. Tesi doctoral, UPC, Departament d'Enginyeria Electrònica, 2014.
dc.identifier.urihttp://hdl.handle.net/2117/95356
dc.description.abstractThis thesis presents a body of work on the modeling of and performance predictions for carbon nanotube field-effect transistors (CNFET) and graphene field-effect transistors (GFET). While conventional silicon-based CMOS is expected to reach its ultimate scaling limits during the next decade, these two novel technologies are promising candidates for future high-performance electronics. The main goal of this work is to investigate on the opportunities of using such carbon-based electronics for RF integrated circuits. This thesis addresses 1) the modeling of noise and process variability in CNFETs, 2) RF performance predictions for CNFETs, and 3) an accurate GFET compact model. This work proposes the first CNFET noise compact model. Noise is of primary importance for RF applications and its description significantly increases the insight gained from simulation studies. Furthermore, a CNFET variability model is presented, which handles tube synthesis and metal tube removal imperfections. These two model extensions have been added to the Stanford CNFET compact model and allow for the variability-aware RF performance assessment of the CNFET technology. In continuation, comprehensive RF performance projections for CNFETs are provided both on the device and circuit level. The overall set of ITRS RF-CMOS technology requirement FoMs is determined and shows that the CNFET performs excellently in terms of speed, gain, and minimum noise figure. Furthermore, for the first time FoMs are reported for the basic RF building blocks low-noise amplifier and oscillator. In addition, it is shown that CNFET downscaling yields significant performance improvements. Based on these analyses it is confirmed that the CNFET has the potential to outperform Si-CMOS in RF applications. A third key contribution of this thesis is the development of an accurate GFET compact model. Previous compact models simplify several physical aspects, which can cause erroneous simulation results. Here, an accurate yet simple mathematical description of the GFET’s current-voltage relation is proposed and implemented in Verilog-A. Comprehensive error analyses are done in order to highlight the advantages of the new approach. Furthermore, the model is verified against measurement results. The developed GFET model is an important step towards better understanding the characteristics and opportunities of graphene-based analog circuitry.
dc.format.extent193 p.
dc.language.isoeng
dc.publisherUniversitat Politècnica de Catalunya
dc.rightsADVERTIMENT. L'accés als continguts d'aquesta tesi doctoral i la seva utilització ha de respectar els drets de la persona autora. Pot ser utilitzada per a consulta o estudi personal, així com en activitats o materials d'investigació i docència en els termes establerts a l'art. 32 del Text Refós de la Llei de Propietat Intel·lectual (RDL 1/1996). Per altres utilitzacions es requereix l'autorització prèvia i expressa de la persona autora. En qualsevol cas, en la utilització dels seus continguts caldrà indicar de forma clara el nom i cognoms de la persona autora i el títol de la tesi doctoral. No s'autoritza la seva reproducció o altres formes d'explotació efectuades amb finalitats de lucre ni la seva comunicació pública des d'un lloc aliè al servei TDX. Tampoc s'autoritza la presentació del seu contingut en una finestra o marc aliè a TDX (framing). Aquesta reserva de drets afecta tant als continguts de la tesi com als seus resums i índexs.
dc.sourceTDX (Tesis Doctorals en Xarxa)
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica
dc.titleOpportunities for radio frequency nanoelectronic integrated circuits using carbon-based technologies
dc.typeDoctoral thesis
dc.subject.lemacCircuits integrats de radiofreqüència
dc.subject.lemacNanotubs de carboni
dc.subject.lemacNanoelectrònica
dc.identifier.dlB 19929-2014
dc.rights.accessOpen Access
dc.description.versionPostprint (published version)
dc.identifier.tdxhttp://hdl.handle.net/10803/145982


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