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Performance impact of a slower main memory: a case study of STT-MRAM in HPC

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Performance Impact of a Slower Main Memory.pdf (380,0Kb)
 
10.1145/2989081.2989082
 
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hdl:2117/91091

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Asifuzzaman, Kazi
Pavlovic, Milan
Radulović, Milan
Zaragoza, David
Kwon, Ohseong
Ryoo, Kyung-Chang
Radojković, Petar
Document typeConference lecture
Defense date2016-10
PublisherACM
Rights accessOpen Access
All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder
ProjectCOMPUTACION DE ALTAS PRESTACIONES VII (MINECO-TIN2015-65316-P)
ExaNoDe - European Exascale Processor Memory Node Design (EC-H2020-671578)
Abstract
In high-performance computing (HPC), significant effort is invested in research and development of novel memory technologies. One of them is Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) --- byte-addressable, high-endurance non-volatile memory with slightly higher access time than DRAM. In this study, we conduct a preliminary assessment of HPC system performance impact with STT-MRAM main memory with recent industry estimations. Reliable timing parameters of STT-MRAM devices are unavailable, so we also perform a sensitivity analysis that correlates overall system slowdown trend with respect to average device latency. Our results demonstrate that the overall system performance of large HPC clusters is not particularly sensitive to main-memory latency. Therefore, STT-MRAM, as well as any other emerging non-volatile memories with comparable density and access time, can be a viable option for future HPC memory system design.
CitationAsifuzzaman, Kazi [et al.]. Performance impact of a slower main memory: a case study of STT-MRAM in HPC. A: MEMSYS '16. "Proceedings of the Second International Symposium on Memory Systems". ACM, 2016, p. 40-49. 
URIhttp://hdl.handle.net/2117/91091
DOI10.1145/2989081.2989082
ISBN978-1-4503-4305-3
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