Mostra el registre d'ítem simple
Characterization and modeling of organic thin-film transistors based pi-conjugated small molecule tetraphenyldibenzoperiflanthene: effects of channel length
dc.contributor.author | Boukhili, W. |
dc.contributor.author | Mahdouani, M. |
dc.contributor.author | Bourguiga, R. |
dc.contributor.author | Puigdollers i González, Joaquim |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2016-07-22T17:33:12Z |
dc.date.available | 2016-07-22T17:33:12Z |
dc.date.issued | 2016-07-01 |
dc.identifier.citation | Boukhili , W., Mahdouani, M., Bourguiga, R., Puigdollers, J. Characterization and modeling of organic thin-film transistors based pi-conjugated small molecule tetraphenyldibenzoperiflanthene: effects of channel length. "Microelectronic engineering", 1 Juliol 2016, vol. 160, p. 39-48. |
dc.identifier.issn | 0167-9317 |
dc.identifier.uri | http://hdl.handle.net/2117/89098 |
dc.description.abstract | P-type organic thin film transistors (OTFTs) with different channel lengths have been fabricated and characterized by thermal evaporation using the small tetraphenyldibenzoperiflanthene (DBP) as an active material on Si/SiO2 substrate. The influence of the channel length on the electrical performance of DBP based organic thin film transistors (DBP-TFTs) prepared with bottom gate-bottom contact in the linear and saturation regimes was systematically examined in this work. All devices showed a significant increase in the output and transfer drain current as the channel lengths were decreased in the linear and saturation regimes. We have reported the variation of the electrical parameters such as transconductance (g(m)), field effect mobility (mu(lin) and mu(sat)), contacts and total resistances (R-C and R-T), threshold voltage (V-th), total trap density (N-trap), subthreshold slope (SS), the interface trap density (D-it), turn-on voltage (V-on) and the ratio current (I-on/I-off) by channel length variation which are extracted from the experimental electrical data current-voltage of DBP-TFTs. We found that the field effect mobility is extremely dependent on the channel length dimensions. We also show that for smaller channel length, it results in a good mobility and a good ratio current of the DBP-TFTs with a short channel length (good saturation mobility and current ratio mu(sat.max) = 3 x 10(-2) cm(2) V-1 s(-1),1.6 x 10(4), respectively, for L = 2.5 mu m). The developed model shows a good agreement with the measured data for all values of channel lengths (L). |
dc.format.extent | 10 p. |
dc.language.iso | eng |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica |
dc.subject.lcsh | Microelectronics |
dc.subject.other | Channel length effects |
dc.subject.other | pi-conjugated small-molecule |
dc.subject.other | DBP-TFTs |
dc.subject.other | Modeling |
dc.subject.other | Field-effect transistors |
dc.subject.other | Current-voltage characteristics |
dc.subject.other | Gate insulator |
dc.subject.other | Electrical characteristics |
dc.subject.other | Extracting parameters |
dc.subject.other | Contact resistance |
dc.subject.other | Dependent mobility |
dc.subject.other | Threshold voltage |
dc.subject.other | Dielectric layer |
dc.subject.other | Octithiophene 8t |
dc.title | Characterization and modeling of organic thin-film transistors based pi-conjugated small molecule tetraphenyldibenzoperiflanthene: effects of channel length |
dc.type | Article |
dc.subject.lemac | Microelectrònica |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1016/j.mee.2016.03.002 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | http://www.sciencedirect.com/science/article/pii/S0167931716301137 |
dc.rights.access | Open Access |
local.identifier.drac | 18085152 |
dc.description.version | Preprint |
local.citation.author | Boukhili, W.; Mahdouani, M.; Bourguiga, R.; Puigdollers, J. |
local.citation.publicationName | Microelectronic engineering |
local.citation.volume | 160 |
local.citation.startingPage | 39 |
local.citation.endingPage | 48 |
Fitxers d'aquest items
Aquest ítem apareix a les col·leccions següents
-
Articles de revista [346]
-
Articles de revista [1.728]