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dc.contributor.authorBoukhili, W.
dc.contributor.authorMahdouani, M.
dc.contributor.authorBourguiga, R.
dc.contributor.authorPuigdollers i González, Joaquim
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2016-07-22T17:33:12Z
dc.date.available2016-07-22T17:33:12Z
dc.date.issued2016-07-01
dc.identifier.citationBoukhili , W., Mahdouani, M., Bourguiga, R., Puigdollers, J. Characterization and modeling of organic thin-film transistors based pi-conjugated small molecule tetraphenyldibenzoperiflanthene: effects of channel length. "Microelectronic engineering", 1 Juliol 2016, vol. 160, p. 39-48.
dc.identifier.issn0167-9317
dc.identifier.urihttp://hdl.handle.net/2117/89098
dc.description.abstractP-type organic thin film transistors (OTFTs) with different channel lengths have been fabricated and characterized by thermal evaporation using the small tetraphenyldibenzoperiflanthene (DBP) as an active material on Si/SiO2 substrate. The influence of the channel length on the electrical performance of DBP based organic thin film transistors (DBP-TFTs) prepared with bottom gate-bottom contact in the linear and saturation regimes was systematically examined in this work. All devices showed a significant increase in the output and transfer drain current as the channel lengths were decreased in the linear and saturation regimes. We have reported the variation of the electrical parameters such as transconductance (g(m)), field effect mobility (mu(lin) and mu(sat)), contacts and total resistances (R-C and R-T), threshold voltage (V-th), total trap density (N-trap), subthreshold slope (SS), the interface trap density (D-it), turn-on voltage (V-on) and the ratio current (I-on/I-off) by channel length variation which are extracted from the experimental electrical data current-voltage of DBP-TFTs. We found that the field effect mobility is extremely dependent on the channel length dimensions. We also show that for smaller channel length, it results in a good mobility and a good ratio current of the DBP-TFTs with a short channel length (good saturation mobility and current ratio mu(sat.max) = 3 x 10(-2) cm(2) V-1 s(-1),1.6 x 10(4), respectively, for L = 2.5 mu m). The developed model shows a good agreement with the measured data for all values of channel lengths (L).
dc.format.extent10 p.
dc.language.isoeng
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
dc.subject.lcshMicroelectronics
dc.subject.otherChannel length effects
dc.subject.otherpi-conjugated small-molecule
dc.subject.otherDBP-TFTs
dc.subject.otherModeling
dc.subject.otherField-effect transistors
dc.subject.otherCurrent-voltage characteristics
dc.subject.otherGate insulator
dc.subject.otherElectrical characteristics
dc.subject.otherExtracting parameters
dc.subject.otherContact resistance
dc.subject.otherDependent mobility
dc.subject.otherThreshold voltage
dc.subject.otherDielectric layer
dc.subject.otherOctithiophene 8t
dc.titleCharacterization and modeling of organic thin-film transistors based pi-conjugated small molecule tetraphenyldibenzoperiflanthene: effects of channel length
dc.typeArticle
dc.subject.lemacMicroelectrònica
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1016/j.mee.2016.03.002
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://www.sciencedirect.com/science/article/pii/S0167931716301137
dc.rights.accessOpen Access
local.identifier.drac18085152
dc.description.versionPreprint
local.citation.authorBoukhili, W.; Mahdouani, M.; Bourguiga, R.; Puigdollers, J.
local.citation.publicationNameMicroelectronic engineering
local.citation.volume160
local.citation.startingPage39
local.citation.endingPage48


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