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dc.contributor.authorde los Reyes, Elías
dc.date.accessioned2016-07-15T07:58:37Z
dc.date.available2016-07-15T07:58:37Z
dc.date.issued1978-06
dc.identifier.citationde los Reyes, E. 100 K uncooled GaAs mesfet amplifier as paramp replacement. "Electronics Letters", Juny 1978, vol. 14, núm. 12, p. 378-379.
dc.identifier.issn0013-5194
dc.identifier.urihttp://hdl.handle.net/2117/88814
dc.description.abstractThe characterisation, design and realisation of a low noise GaAs m.e.s.f.e.t. amplifier to replace a narrow band parametric amplifier at 1.7 GHz is described. Special measurement and analytical techniques are necessary owing to the high reflection coefficients and conditional stability of the transistor, as well as the very low noise figures being measured. A single stage amplifier is realised with a noise figure of 1.25 dB and 13.5 dB associated gain at 1.7 GHz.
dc.format.extent2 p.
dc.language.isoeng
dc.publisherInstitution of Electrical Engineers
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Enginyeria de la telecomunicació
dc.subject.lcshMicrowaves
dc.subject.otherField effect transistor circuits
dc.subject.otherMicrowave parametric amplifiers
dc.subject.otherSolid-state microwave circuits
dc.title100 K uncooled GaAs mesfet amplifier as paramp replacement
dc.typeArticle
dc.subject.lemacMicroones
dc.identifier.doi10.1049/el:19780255
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://ieeexplore.ieee.org.recursos.biblioteca.upc.edu/stamp/stamp.jsp?tp=&arnumber=4242236
dc.rights.accessOpen Access
local.identifier.drac18770908
dc.description.versionPostprint (published version)
local.citation.authorde los Reyes, E.
local.citation.publicationNameElectronics Letters
local.citation.volume14
local.citation.number12
local.citation.startingPage378
local.citation.endingPage379


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