Behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic modules under outdoor long term exposure
Rights accessOpen Access
Four years'behavioraldataofthin-film single junction amorphous silicon (a-Si)photovoltaic(PV)modules installed in a relatively dry and sunny inland site with aContinental-Mediterranean climate (in thecityofJaén,Spain)are presented in this article.The shared data contributes to clarify how the Light Induced Degradation(LID) impacts the output power generated by the PV array,especially in the first days of exposure under outdoor conditions. Furthermore, a valuable methodology is provided in this data article permitting the assessment of the degradation rate and the stabilization period of theP V modules. Further discussions an dinterpretations concerning the data shared in this article can be found in ter esearch paper “Char- acterization of degradation and evaluation of model parameters of amorphous silicon photovoltaic modules under outdoor long term exposure” (Kichou etal.,2016) .
CitationKichou, S., Silvestre, S., Nofuentes Garrido, Gustavo, Torres-Ramirez, M., Chouder, A., Guasch, D. Behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic modules under outdoor long term exposure. "Data in Brief", 01 Juny 2016, vol. 7, p. 366-371.