A large signal nonlinear MODFET model from small signal S-parameters
Document typeConference report
Rights accessOpen Access
A general technique for predicting the MODFET large signal performance has been developed. The technique is based entirely on experimental data (small signal S-parameters at different biased points) and therefore is independent of the structure of the FET. Software requirements include a program to fit an equivalent circuit to S parameter data; a simple least-square polynomial approximation program; and SPICE for nonlinear time-domain simulations. Hardware requirements are basically limited to a network analyzer to carry out the small-signal S parameter measurements. Measurements at 10 GHz confirm the validity of the model.
CitationO'callaghan, J., Beyer, J. A large signal nonlinear MODFET model from small signal S-parameters. A: IEEE MTT-S International Microwave Symposium. "1989 IEEE MTT-S International Microwave Symposium Digest: June 13-15, 1989: Long Beach, California". 1989, p. 347-350.