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dc.contributor.authorMasana Nadal, Francisco
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2010-08-23T10:33:57Z
dc.date.available2010-08-23T10:33:57Z
dc.date.created2010
dc.date.issued2010
dc.identifier.citationMasana, F. SiC Schottky diode electrothermal macromodel. A: Mixed Design of Integrated Circuits and Systems. "MIXDES". Wroslaw: 2010, p. 371-374.
dc.identifier.isbn978-83-928756-3-5
dc.identifier.urihttp://hdl.handle.net/2117/8687
dc.description.abstractThis paper presents a SiC Schottky diode model including static, dynamic and thermal features implemented as separate parameterized blocks constructed from SPICE Analog Behavioral Modeling (ABM) controlled sources. The parameters for each block are easy to extract, even from readily available diode data sheet information. The model complexity is low thus allowing reasonably long simulation times to cope with the rather slow self heating process and yet accurate enough for practical purposes.
dc.format.extent4 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica
dc.subject.lcshDiodes
dc.subject.lcshHeating--Research
dc.titleSiC Schottky diode electrothermal macromodel
dc.typeConference report
dc.subject.lemacDíodes
dc.subject.lemacElectrònica
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.rights.accessOpen Access
local.identifier.drac2634177
dc.description.versionPostprint (published version)
local.citation.authorMasana, F.
local.citation.contributorMixed Design of Integrated Circuits and Systems
local.citation.pubplaceWroslaw
local.citation.publicationNameMIXDES
local.citation.startingPage371
local.citation.endingPage374


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