Single-Step multiple-layers wafer slicing from macroporous silicon
Document typeConference report
Rights accessOpen Access
There is a rising interest, from both photovoltaics and microelectronics industry, in wafer thickness reduction. During the last decade, it has been steadily reduced from 350 µm to 180 µm, but benefits are foreseen for thicknesses well below these values. The current sawing technology, however, suffers from large kerf losses and further reductions are increasingly difficult. Several technologies have emerged aiming to produce thin Si foils from a wafer, such as layer transfer, induced cleaving, or pore reorganization. These methods produce a single layer by step. In this work we report on a method able to produce many crystalline layers from a single silicon wafer and in a single fabrication step.
CitationGarin, M., Hernandez, D., Trifonov, T., Cardador, D., Alcubilla, R. Single-Step multiple-layers wafer slicing from macroporous silicon. A: European Photovoltaic Solar Energy Conference and Exhibition. "Proceedings EU PSVSEC 2013, 28th European Photovoltaic Solar Energy Conference and Exhibition, Parc des Expositions Paris Nord Villepinte, Paris, France, Conference 30 Sep - 04 Oct 2013, Exhibition 01 Oct - 03 Oct 2013". Paris Nord Villepinte: 2013, p. 933-936.