Rogue waves in injected semiconductor lasers with current modulation: role of the modulation phase
Tipo de documentoArtículo
Fecha de publicación2014-11-17
Condiciones de accesoAcceso restringido por política de la editorial
Semiconductor lasers with continuous-wave optical injection display a rich variety of behaviors, including stable locking, periodic or chaotic oscillations, excitable pulses, etc. Within the chaotic regime it has been shown that the laser intensity can display extreme pulses, which have been identified as optical rogue waves (RWs), and it has also been shown that such extreme pulses can be completely suppressed via direct modulation of the laser current, with appropriated modulation amplitude and frequency. Here we perform a numerical analysis of the RW statistics and show that, when RWs are not suppressed by current modulation, their probability of occurrence strongly depends on the phase of the modulation. If the modulation is slow (the modulation frequency, f(mod), is below the relaxation oscillation frequency, f(ro)), the RWs occur within a well-defined interval of values of the modulation phase, i.e., there is a
CitaciónAhuja, J., Nalawade, D., Zamora, J., Vilaseca, R., Masoller, C. Rogue waves in injected semiconductor lasers with current modulation: role of the modulation phase. "Optics express", 17 Novembre 2014, vol. 22, núm. 23, p. 28377-28382.
Versión del editorhttps://www.osapublishing.org/oe/abstract.cfm?uri=oe-22-23-28377