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dc.contributor.authorLázaro Guillén, Antoni
dc.contributor.authorPradell i Cara, Lluís
dc.contributor.authorO'Callaghan Castellà, Juan Manuel
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
dc.date.accessioned2016-04-28T08:09:27Z
dc.date.available2016-04-28T08:09:27Z
dc.date.issued1999-03
dc.identifier.citationLazaro, A., Pradell, L., O'callaghan, J. FET noise-parameter determination using a novel technique based on 50 noise measurements. "IEEE transactions on microwave theory and techniques", Març 1999, vol. 47, núm. 3, p. 315-324.
dc.identifier.issn0018-9480
dc.identifier.urihttp://hdl.handle.net/2117/86312
dc.description.abstractA novel method for measuring the four noise parameters of a field-effect transistor (FET) is presented. It is based on the determination of its intrinsic noise matrix elements [CINT 11 , CINT 22 , Re(CINT 12 ), Im(CINT 12 )] by fitting the measured device noise figure for a matched source reflection coefficient (F50) at a number of frequency points, thus, a tuner is not required. In contrast to previous works, no restrictive assumptions are made on the intrinsic noise sources. The receiver full-noise calibration is easily performed by using a set of coaxial and on-wafer standards that are commonly available in a microwave laboratory, thus, an expensive broad-band tuner is not required for calibration either. On-wafer experimental verification up to 26 GHz is presented and a comparison with other F50-based and tunerbased methods is given. As an application, the dependence of the FET intrinsic noise sources as a function of the bias drain–current and gate–length is obtained.
dc.format.extent10 p.
dc.language.isoeng
dc.publisherIEEE Microwave Theory and Techniques Society
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica
dc.subject.lcshHearing
dc.subject.otherAcoustic reflection
dc.subject.otherCalibration
dc.titleFET noise-parameter determination using a novel technique based on 50 noise measurements
dc.typeArticle
dc.subject.lemacOïda
dc.contributor.groupUniversitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones
dc.identifier.doi10.1109/22.750233
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=750233
dc.rights.accessOpen Access
local.identifier.drac1635281
dc.description.versionPostprint (published version)
local.citation.authorLazaro, A.; Pradell, L.; O'callaghan, J.
local.citation.publicationNameIEEE transactions on microwave theory and techniques
local.citation.volume47
local.citation.number3
local.citation.startingPage315
local.citation.endingPage324


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