FET noise-parameter determination using a novel technique based on 50 noise measurements
Tipus de documentArticle
EditorIEEE Microwave Theory and Techniques Society
Condicions d'accésAccés obert
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is presented. It is based on the determination of its intrinsic noise matrix elements [CINT 11 , CINT 22 , Re(CINT 12 ), Im(CINT 12 )] by fitting the measured device noise figure for a matched source reflection coefficient (F50) at a number of frequency points, thus, a tuner is not required. In contrast to previous works, no restrictive assumptions are made on the intrinsic noise sources. The receiver full-noise calibration is easily performed by using a set of coaxial and on-wafer standards that are commonly available in a microwave laboratory, thus, an expensive broad-band tuner is not required for calibration either. On-wafer experimental verification up to 26 GHz is presented and a comparison with other F50-based and tunerbased methods is given. As an application, the dependence of the FET intrinsic noise sources as a function of the bias drain–current and gate–length is obtained.
CitacióLazaro, A., Pradell, L., O'callaghan, J. FET noise-parameter determination using a novel technique based on 50 noise measurements. "IEEE transactions on microwave theory and techniques", Març 1999, vol. 47, núm. 3, p. 315-324.
Versió de l'editorhttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=750233