Direct extraction of all four transistor noise parameters from 50 noise figure measurements

Cita com:
hdl:2117/86306
Document typeArticle
Defense date1998-02
PublisherInstitution of Electrical Engineers
Rights accessOpen Access
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Abstract
A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based on the determination of its intrinsic noise matrix elements (C, ,INT, C,,7NT, Re(C,,
CitationLazaro, A., Pradell, L., Beltrán, A., O'callaghan, J. Direct extraction of all four transistor noise parameters from 50 noise figure measurements. "Electronics Letters", Febrer 1998, vol. 34, núm. 3, p. 289-291.
ISSN0013-5194
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