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dc.contributor.authorDavidson, B A
dc.contributor.authorRedwing, Rd
dc.contributor.authorNguyen, T
dc.contributor.authorO'Callaghan Castellà, Juan Manuel
dc.contributor.authorRaissi, F
dc.contributor.authorLee, J V
dc.contributor.authorBruke, J P
dc.contributor.authorHohenwarter, Gkg
dc.contributor.authorNordman, J E
dc.contributor.authorBeyer, J B
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
dc.date.accessioned2016-04-27T15:19:22Z
dc.date.available2016-04-27T15:19:22Z
dc.date.issued1994-12
dc.identifier.citationDavidson, B., Redwing, R., Nguyen, T., O'callaghan, J., Raissi, F., Lee, J., Bruke, J., Hohenwarter, G., Nordman, J., Beyer, J. Magnetic field sensitivity of variable thickness microbridges in tbcco, bscco and ybco. "IEEE transactions on applied superconductivity", Desembre 1994, vol. 4, núm. 4, p. 3369-3372.
dc.identifier.issn1051-8223
dc.identifier.urihttp://hdl.handle.net/2117/86279
dc.description.abstractWe describe results of a study comparing the magnetic field sensitivities of variable thickness bridge (VTB) arrays fabricated in TBCCO, BSCCO, and YBCO thin films. Identical structures were patterned in a variety of films, and the bridges were thinned by four different methods. Analysis of the data yields experimental evidence as to the suitability of these types of films for devices such as the superconducting flux flow transistor (SFFT) which is based on this geometry. The volt-ampere characteristics of the arrays were measured in low uniform magnetic fields (⩽130 G) and in nonuniform fields (⩽5 G) produced by a nearby control line. For these films in this geometry, no measurable effect of the control line magnetic field was observed. Large values of transresistance and current gain could only be attained through a thermal mechanism when the control line was driven normal. Upper bounds for (magnetically generated) transresistance (⩽5 mO) and current gains (⩽0.005) have been inferred from the uniform field data assuming a standard best-case device geometry. All volt-ampere curves followed closely a power law relationship (V~I n), with exponent n ~1.2-10. We suggest materials considerations that may yield improved device performance [-]
dc.format.extent4 p.
dc.language.isoeng
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica
dc.subject.lcshElectromagnetic fields
dc.titleMagnetic field sensitivity of variable thickness microbridges in tbcco, bscco and ybco
dc.typeArticle
dc.subject.lemacCamps electromagnètics
dc.contributor.groupUniversitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones
dc.description.peerreviewedPeer Reviewed
dc.rights.accessOpen Access
local.identifier.drac1654620
dc.description.versionPostprint (published version)
local.citation.authorDavidson, B.; Redwing, R.; Nguyen, T.; O'callaghan, J.; Raissi, F.; Lee, J.; Bruke, J.; Hohenwarter, G.; Nordman, J.; Beyer, J.
local.citation.publicationNameIEEE transactions on applied superconductivity
local.citation.volume4
local.citation.number4
local.citation.startingPage3369
local.citation.endingPage3372


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