| dc.contributor.author | James, Pm |
| dc.contributor.author | O'Callaghan Castellà, Juan Manuel |
| dc.contributor.other | Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions |
| dc.date.accessioned | 2016-04-27T15:08:02Z |
| dc.date.available | 2016-04-27T15:08:02Z |
| dc.date.issued | 1993-03 |
| dc.identifier.citation | James, P., O'callaghan, J. Application of selective leaching in fabrication of thin film ybco devices. "IEEE transactions on applied superconductivity", Març 1993, vol. 3, núm. 1, p. 2972-2974. |
| dc.identifier.issn | 1051-8223 |
| dc.identifier.uri | http://hdl.handle.net/2117/86277 |
| dc.description.abstract | Ethylenediamine solutions have been shown to turn bulk YBCO into insulating materials. The effect of these solutions on thin YBCO films is studied. In both unpatterned and patterned films, a smooth decrease in critical currents, a transition to normal state, and a subsequent gradual increase in resistance are observed as a function of exposure time to the solution. It is noted that these characteristics might make this process desirable for weak-link and on-film resistor fabrication. |
| dc.format.extent | 3 p. |
| dc.language.iso | eng |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
| dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica |
| dc.subject.lcsh | Electronics |
| dc.title | Application of selective leaching in fabrication of thin film ybco devices |
| dc.type | Article |
| dc.subject.lemac | Electrònica |
| dc.contributor.group | Universitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones |
| dc.description.peerreviewed | Peer Reviewed |
| dc.rights.access | Open Access |
| local.identifier.drac | 1654677 |
| dc.description.version | Postprint (published version) |
| local.citation.author | James, P.; O'callaghan, J. |
| local.citation.publicationName | IEEE transactions on applied superconductivity |
| local.citation.volume | 3 |
| local.citation.number | 1 |
| local.citation.startingPage | 2972 |
| local.citation.endingPage | 2974 |
