Caracterización de dispositivos de AsGa MESFET. Amplificadores de bajo ruido. Ganancia máxima. Ampliación del margen dinámico

Abstract

A method for de characterization of solid state amplifying devices has been developed thats allows one the determination of the input and o output amplifier, matching networks for low noise, maximum power transfer and maximum output power compatible with system linearity. The method as the same for the three purposes permithings the small signal as well the large signal device characterization. The work assumes that the device polarization is fixed by the particular application.