High efficiency interdigitated back-contact c-Si solar cells
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hdl:2117/85295
Tipus de documentText en actes de congrés
Data publicació2015
EditorInstitute of Electrical and Electronics Engineers (IEEE)
Condicions d'accésAccés obert
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Reconeixement-NoComercial-SenseObraDerivada 3.0 Espanya
Abstract
In this work we describe a baseline fabrication process of interdigitated-back-contact c-Si(p) solar cells, which combines conventional diffusion oven stages to define base p+ and emitter n+ regions at the backside, with front surface passivation using atomic layer deposited Al2O3 films on textured surfaces with random pyramids. Very low reflectance with outstanding surface recombination velocity values around 3 cm/s are achieved in our precursors. Fabricated solar cells reach efficiencies up to 20.3% (AM1.5G 1 kW/m2, T=25°C), with short circuit density Jsc, open circuit voltage Voc and fill factor FF of 40.6 mA/cm2, 648 mV and 77.2% respectively.
CitacióCalle, E., Ortega, P., Lopez, G., Martin, I., Carrió, D., Voz, C., Orpella, A., Puigdollers, J., Alcubilla, R. High efficiency interdigitated back-contact c-Si solar cells. A: Spanish Conference on Electron Devices. "2015 10th Spanish Conference on Electron Devices (CDE 2015): Aranjuez-Madrid, Spain: 11-13 February 2015". Madrid: Institute of Electrical and Electronics Engineers (IEEE), 2015.
ISBN9781479981090
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CDE_2015_Calle-Ortega et al_High efficiency.pdf | 325,1Kb | Visualitza/Obre |