Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells
Tipo de documentoArtículo
Fecha de publicación2015-08-28
Condiciones de accesoAcceso abierto
Abstract In this work, we describe a novel fabrication process of p-type interdigitated back contact (IBC) silicon solar developed by means of laser doping and laser firing techniques. We use dielectric layers both as dopant sources to create highly-doped regions and as passivating layers. In particular, we use phosphorus-doped silicon carbide stacks (a-SiCx (n)) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and aluminum oxide (Al2O3) layer deposited by atomic layer deposition (ALD). Emitters were fabricated with a light thermal phosphorus diffusion in order to reduce bulk and surface emitter recombination losses. Highly doped regions n++ (emitter) and p++ (base) were simultaneously created in a point-like structure using a pulsed Nd-YAG 1064 nm laser in the nanosecond regime by laser processing the dielectric layers. The results obtained for a cell, 3x3 cm2, are presented. Efficiencies up to 18.1% (Jsc = 39 mA/cm2, Voc = 632 mV, FF = 73.4%) have been achieved in our fabricated IBC cells.
CitaciónLopez, G., Ortega, P., Martin, I., Voz, C., Morales, A., Orpella, A., Alcubilla, R. Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells. "Energy procedia", 28 Agost 2015, vol. 77, p. 752-758.