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dc.contributor.authorGilasgar, Mitra
dc.contributor.authorBarlabe Dalmau, Antoni
dc.contributor.authorPradell i Cara, Lluís
dc.contributor.authorMansour, Raafat
dc.contributor.authorBatri-Kaseem, Maher
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
dc.date.accessioned2016-02-26T08:05:55Z
dc.date.available2016-02-26T08:05:55Z
dc.date.issued2015
dc.identifier.citationGilasgar, M., Barlabe, A., Pradell, L., Mansour, R. High efficiency reconfigurable class-F power amplifier at 2.4 GHz in CMOS-MEMS technology. A: International Symposium on RF MEMS and RF Microsystems. "16th edition of the International Symposium on RF-MEMS and RF-MICROSYSTEMS : MEMSWAVE 2015 : Barcelona, Catalonia, Spain, on June 29th –July 1st 2015". Barcelona: 2015, p. 92-95.
dc.identifier.isbn978-84-943928-7-0
dc.identifier.urihttp://hdl.handle.net/2117/83466
dc.description.abstractA novel reconfigurable CMOS class-F power amplifier is proposed in this paper which can adapt to load variations resulted from the hand effect on a mobile phone. Reconfigurability is achieved by using MEMS switches that are integrated monolithically in the CMOS technology along the rest of the circuit, reducing the cost and size. This structure integrates MEMS varactor inside CMOS technology that are built through a mask-less post-processing technique. Designed for 2.4GHz, for a load impedance of 50O, simulations results show that the power amplifier achieves a power added efficiency of 32.8% and a power gain of 12.9 dB, while delivering peak output power of 18.2 dBm. Simulation results for different load variations have been performed showing a great improvement in efficiency and output power by using the proposed structure. The total size of the fabricated chip is 1.6 mm x 1.6 mm.
dc.format.extent4 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència
dc.subject.lcshPower amplifiers
dc.subject.lcshElectric current converters
dc.subject.otherHigh Efficiency
dc.subject.otherRF Power Amplifier
dc.subject.otherClass-F
dc.subject.otherCMOS
dc.subject.otherMEMS
dc.titleHigh efficiency reconfigurable class-F power amplifier at 2.4 GHz in CMOS-MEMS technology
dc.typeConference report
dc.subject.lemacAmplificadors de potència
dc.subject.lemacConvertidors de corrent elèctric
dc.contributor.groupUniversitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones
dc.identifier.dlB-13770-2015
dc.description.peerreviewedPeer Reviewed
dc.rights.accessRestricted access - confidentiality agreement
drac.iddocument17529827
dc.description.versionPostprint (published version)
upcommons.citation.authorGilasgar, M.; Barlabe, A.; Pradell, L.; Mansour, R.
upcommons.citation.contributorInternational Symposium on RF MEMS and RF Microsystems
upcommons.citation.pubplaceBarcelona
upcommons.citation.publishedtrue
upcommons.citation.publicationName16th edition of the International Symposium on RF-MEMS and RF-MICROSYSTEMS : MEMSWAVE 2015 : Barcelona, Catalonia, Spain, on June 29th –July 1st 2015
upcommons.citation.startingPage92
upcommons.citation.endingPage95


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